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  • 287 D. Kang, J. T. Jang, S. Park, D. M. Kim, S.-J. Choi and D. H. Kim "Characteristics of a-IGZO Synaptic Transistor having Extended Gate with Al2O3 gate insulator by low temperature ALD" The 27th Korean Conference on Semiconductors, 2020-02
  • 286 D. Kim1, J. T. Jang1, W. S. Choi1, S. Baek1, D. M. Kim1, S.-J. Choi1, S. Ban 2, M. Shin 2, H. Lee 2, H. Lee2, H.-S. Mo1, and D. H. Kim1* (1 School of EE, Kookmin University, 2 SK Hynix) "Physics-based PcRAM Compact Model and Its Application to the SPICE Transient Simulation Considering the Ratio of Vertical/Lateral Crystal Growth Rate" The 27th Korean Conference on Semiconductors, 2020-02
  • 285 J.-H. Kim, S. Choi, Y. J. Seo, J. Park, G. W. Yang, I. Chae, D. M. Kim, S.-J. Choi, and D. H. Kim* "Relationship between the gate bias and stretched-exponential function model on the positive bias stress-induced charge trapping in IGZO TFTs" The 27th Korean Conference on Semiconductors, 2020-02
  • 284 H. B. Yoo, H. Kim, J. Yu, Y. J. Park, S.-J. Choi, D. H. Kim, and D. M. Kim "Alternating Current-based Open Drain Method for Separate Extraction of Source and Drain Resistances in MOSFETs" The 27th Korean Conference on Semiconductors, 2020-02
  • 283 J. T. Jang†, J. Min†, W. S. Choi, D. Kim, J. Park, S.-J. Choi, D. M. Kim, and D. H. Kim (†These authors equally contributed to this work) "Training and Operation of an Artificial Neural Network in IGZO-based Crossbar Array" The 27th Korean Conference on Semiconductors, 2020-02
  • 282 S. Park, J. T. Jang, D. Kang, D. M. Kim, S.-J. Choi, and D. H. Kim* "Influence of Interfacial SiO2 Layer on PBS-induced Instability in Amorphous InGaZnO TFTs with Low Temperature ALD Gate Insulator" The 27th Korean Conference on Semiconductors, 2020-02
  • 281 J. Park, J. T. Jang, G. Ahn, J. Min, S.-J. Choi, D. M. Kim, and D. H. Kim* "Performance Improvement of InGaZnO-based RRAM with Al2O3 Inserting Tunneling Barrier Layer" The 27th Korean Conference on Semiconductors, 2020-02
  • 280 Y. Seo, J. T. Jang, S. Park, J.-H. Kim, D. Kang, S. Choi, J. Park, D. M. Kim, S.-J. Choi, and D. H. Kim* "Stretched exponential function-based SPICE simulation considering the bias stress instability of IGZO TFTs" The 27th Korean Conference on Semiconductors, 2020-02
  • 279 G. W. Yang1, S. Choi1, S. G. Seo2, D. M. Kim1, S.-J. Choi1, S. H. Jin2, and D. H. Kim1, * (1 School of Electrical Engineering, Kookmin Univresity 2 Department of Electronic Engineering, Incheon "Positive and Negative Bias-induced Instability in MOS2 Field-Effect Transistors with CYTOP Passivation" The 27th Korean Conference on Semiconductors, 2020-02
  • 278 J. Yu, H. B. Yoo, H. Kim, Y. J. Park, S.-J. Choi, D. H. Kim, and D. M. Kim "Characterization of Spatial Distribution of Traps across the Substrate in Metal-Insulator-Semiconductor Structures with Band Bending Effect" The 27th Korean Conference on Semiconductors, 2020-02
  • 277 H. B. Yoo, Y. J. Park, J. Yu, H. Kim, S.-J. Choi, D. H. Kim, and D. M. Kim "Modeling and Characterization of the Photovoltaic and Photoconductive Effects in Field Effect Transistors under Optical Illumination" The 27th Korean Conference on Semiconductors, 2020-02
  • 276 J. W. Jeon, Y. Lee, J. Yoon, H.-J. Kim, G.-H. Park, D. M. Kim, D. H. Kim, M.-H. Kang, and S.-J. Choi "Carbon nanotube network transistors constructed from the reuse of semiconducting carbon nanotube solution" The 27th Korean Conference on Semiconductors, 2020-02
  • 275 I.-S. Chae, S. Choi, Y. J. Seo, J. Park, J. Min, J.-H. Kim, D. M. Kim, S.-J. Choi, and D. H. Kim* "Extraction Method of Flat-band Voltage by Using Multi Frequency Capacitance-Voltage of a-IGZO Thin Film Transistors" The 27th Korean Conference on Semiconductors, 2020-02
  • 274 W. S. Choi, J. T. Jang, J. Min, D. M. Kim, S.-J. Choi and D. H. Kim "Influence of Al2O3 Insertion Layer on RS/Retention Characteristics in IGZO Memristor for Neuromorphic Application " The 27th Korean Conference on Semiconductors, 2020-02
  • 273 S.-T. Lee, H. Kim, J.-H. Bae, H. Yoo, N. Y. Choi, D. Kwon, S. Lim, B.-G. Park, J.-H. Lee "High-Density and Highly-Reliable Binary Neural Networks Using NAND Flash Memory Cells as Synaptic Devices" 2019 IEEE International Electron Devices Meeting (IEDM), San Francisco, 2019-12
  • 272 S. Choi, J. Kim, J. Yoon, I. Chae, S. -J. Choi, D. M. Kim, H. S. Mo, and D. H. Kim "The Module of Gain-controllable Amplifier Readout Circuits based on Si Nanowire ISFET for Biochips for Optimization of Dynamic Range, Linearity, and Resolution" EEE 49th ESSDERC, pp. 110-113, DOI : 978-1-7281-1539-9/19/$31.00, 2019-09
  • 271 J.-H. Lee, S. Y. Woo, S.-T. Lee, S. Lim, W.-M. Kang, Y.-T. Seo, S. Lee, D. Kwon, S. Oh, Y. Noh, H. Kim, J. Kim, J.-H. Bae "Review of candidate devices for neuromorphic applications" 49th European Solid-State Device Research Conference (ESSDERC 2019), 2019-09
  • 270 Y. Lee, J. Yoon, H.-J. Kim, G.-H. Park, D. H. Kim, D. M. Kim, M.-H. Kang* and S.-J. Choi*(*co-corresponding authors) "Carbon Nanotube Network Transistor for a Physical Unclonable Functions-based Security Device" The 19th IEEE International Conference on Nanotechnology, 2019-07
  • 269 S. Park†, J. T. Jang†, S.-J. Choi, D. M. Kim and D. H. Kim*( †These authors equally contributed to this work) "Synaptic behavior of flexible IGZO TFTs with Al2O3 gate insulator by low temperature ALD" The 19th IEEE International Conference on Nanotechnology, 2019-07
  • 268 J. T. Jang, J. Min, D. Kim, J. Park, S.-J. Choi, D. M. Kim, and D. H. Kim "SPICE compact model of IGZO memristor based on non-quasi statically updated Schottky barrier height" The 19th IEEE International Conference on Nanotechnology, 2019-07
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