300I. Chae, J. T. Jang, S. Park, W. S. Choi, J.-H. Bae, S.-J. Choi, D. M. Kim, and D. H. Kim"Effect of the ALD temperature on switching characteristic in Cu-based CBRAM with the solid electrolyte of Al2O3"The 28th Korean Conference on Semiconductors, 2021-01
299J. W. Jeon1, Y. Lee1, G.-H. Park1, J. Kirn1, D. M. Kim1, D. H. Kim1, M.-H. Kang2, and S.-J. Choi1(1 School of EE, Kookmin University, 2 Department of Nano-process, NNFC)"Wafer-Scale Striped Carbon Nanotube Network Transistor"The 28th Korean Conference on Semiconductors, 2021-01
298H. Lee†, J. Park†, S.-J. Choi, J.-H. Bae, D. M. Kim, and D. H. Kim(†These authors equally contributed to this work)"The IGZO-based Correlated Color Temperature Sensor for Measuring the Melatonin Suppression and the Circadian Disturbance"The 28th Korean Conference on Semiconductors, 2021-01
297Y. Lee1, J. W. Jeon1, J. Kim1, D. H. Kim1, D. M. Kim1, M.-H. Kang2, and S.-J. Choi1(1 School of EE, Kookmin University, 2 Department of Nano-process, NNFC)"Rapid thermal annealed carbon nanotube network transistors for physical unclonable function applications"The 28th Korean Conference on Semiconductors, 2021-01
296T. J. Yang, J. T. Jang, W. S. Choi, D. Kim, J.-H. Bae, S.-J. Choi, D. M. Kim, and D. H. Kim"The Effect of Oxygen Content on the Optical Power- and Wavelength-Dependencies of the IGZO Memristor-based Photodetector"The 28th Korean Conference on Semiconductors, 2021-01
295G. W. Yang, J. Park, S. Choi, D. M. Kim, S.-J. Choi, J.-H. Bae, and D. H. Kim"Experimental Observation of the Variation of Oxygen Vacancy-Related Density of States in InGaZnO TFTs under the Negative Bias Illumination Stress"The 28th Korean Conference on Semiconductors, 2021-01
294J. H. Ryu*, H. B. Yoo*, J. Yu, H. Kim, J.-H. Bae, S.-J. Choi, D. H. Kim, and D. M. Kim(*These authors equally contributed to this work)"Extraction of Interface Traps over the Bandgap through Photovoltaic and Photoconductive Effects in Si MOSFETs under Optical Excitation"The 28th Korean Conference on Semiconductors, 2021-01
293J.-H. Kim, J. T. Jang, D. M. Kim, S.-J. Choi, J.-H. Bae, and D. H. Kim"Influence of the oxygen content on hot carrier effects in the bottom-gate amorphous InGaZnO thin-film transistors"The 28th Korean Conference on Semiconductors, 2021-01
292D. Kang, J. T. Jang, D. M. Kim, S.-J. Choi, J.-H. Bae, and D. H. Kim"Short-term and Long-term Memory operations of a-IGZO Synaptic TFTs with the low-temperature ALD Al2O3 gate insulator and Metal Floating Gate"The 28th Korean Conference on Semiconductors, 2021-01
291W. S. Choi, J. T. Jang, T. J. Yang, S.-J. Choi, J.-H. Bae, D. M. Kim, and D. H. Kim"Improvement of the linearity of synaptic behavior of IGZO memristor by combining the IGZO synaptic transistor"The 28th Korean Conference on Semiconductors, 2021-01
290D. H. Kim"Toward the material-device-circuit co-design of the oxide semiconductor-based artificial intelligence: from transistor, memory, and sensor to modeling, simulation, and reliability"The 28th Korean Conference on Semiconductors, 2021-01
289G. Jung1, S. Hong1, Y. Jeong1, W. Shin1, J. Park1, D. Kim1, J.-H. Bae2, B.-G. Park1, and J.-H. Lee1(1 Seoul National University, Korea, 2 Kookmin University, Korea)"H2S Gas Sensing Characteristics of Si FET-type Gas Sensor with Localized Micro-heater"The 28th Korean Conference on Semiconductors, 2021-01
288J.-H. bae"Reliability Problem and Improvement Strategy of Ferroelectric Memory Device"The 28th Korean Conference on Semiconductors, 2021-01
287D. Kang, J. T. Jang, S. Park, D. M. Kim, S.-J. Choi and D. H. Kim"Characteristics of a-IGZO Synaptic Transistor having Extended Gate with Al2O3 gate insulator by low temperature ALD"The 27th Korean Conference on Semiconductors, 2020-02
286D. Kim1, J. T. Jang1, W. S. Choi1, S. Baek1, D. M. Kim1, S.-J. Choi1, S. Ban 2, M. Shin 2, H. Lee 2, H. Lee2, H.-S. Mo1, and D. H. Kim1* (1 School of EE, Kookmin University, 2 SK Hynix)"Physics-based PcRAM Compact Model and Its Application to the SPICE Transient Simulation Considering the Ratio of Vertical/Lateral Crystal Growth Rate"The 27th Korean Conference on Semiconductors, 2020-02
285J.-H. Kim, S. Choi, Y. J. Seo, J. Park, G. W. Yang, I. Chae, D. M. Kim, S.-J. Choi, and D. H. Kim*"Relationship between the gate bias and stretched-exponential function model on the positive bias stress-induced charge trapping in IGZO TFTs"The 27th Korean Conference on Semiconductors, 2020-02
284H. B. Yoo, H. Kim, J. Yu, Y. J. Park, S.-J. Choi, D. H. Kim, and D. M. Kim"Alternating Current-based Open Drain Method for Separate Extraction of Source and Drain Resistances in MOSFETs"The 27th Korean Conference on Semiconductors, 2020-02
283J. T. Jang†, J. Min†, W. S. Choi, D. Kim, J. Park, S.-J. Choi, D. M. Kim, and D. H. Kim (†These authors equally contributed to this work)"Training and Operation of an Artificial Neural Network in IGZO-based Crossbar Array"The 27th Korean Conference on Semiconductors, 2020-02
282S. Park, J. T. Jang, D. Kang, D. M. Kim, S.-J. Choi, and D. H. Kim*"Influence of Interfacial SiO2 Layer on PBS-induced Instability in Amorphous InGaZnO TFTs with Low Temperature ALD Gate Insulator"The 27th Korean Conference on Semiconductors, 2020-02
281J. Park, J. T. Jang, G. Ahn, J. Min, S.-J. Choi, D. M. Kim, and D. H. Kim*"Performance Improvement of InGaZnO-based RRAM with Al2O3 Inserting Tunneling Barrier Layer"The 27th Korean Conference on Semiconductors, 2020-02