Prof. Kim`s R.P.
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- 137 "The γ -Fe2O3 Nanoparticle Assembly-Based Memristor Ratioed Logic and Its Optical Tuning" IEEE Electron Device Letters, Vol. 37, no. 8, pp. 986-989, DOI: 10.1109/LED.2016.2582523 , 2016-08
- 136 "The Analysis of Characteristics in Dry and Wet Environments of Silicon Nanowire-Biosensor" Journal of Nanoscience and Nanotechnology, vol. 16, no. 5, pp. 4901–4905, DOI: 10.1166/jnn.2016.12247, 2016-05
- 135 "Evaluation of interface trap densities and quantum capacitance in carbon nanotube network thin-film transistors" Nanotechnology, vol. 27, no. 29, p. 295704, DOI: 10.1088/0957-4484/27/29/295704, 2016-06
- 134 "Fully Subthreshold Current-Based Characterization of Interface Traps and Surface Potential in III-V-on-Insulator MOSFETs" Solid-State Electronics, vol. 122, pp. 8-12, DOI: 10.1016/j.sse.2016.04.011, 2016-04
- 133 "The Effect of Gate and Drain Fields on the Competition Between Donor-Like State Creation and Local Electron Trapping in In–Ga–Zn–O Thin Film Transistors Under Current Stress" IEEE Electron Device Letters, vol. 36, no. 12, pp. 1336-1339, 2015-12
- 132 "Investigation of optimal hydrogen sensing performance in semiconducting carbon nanotube network transistors with palladium electrodes" Applied Physics Letters, vol. 107, p. 193108, 2015-11
- 131 "Analysis of Instability Mechanism under Simultaneous Positive Gate and Drain Bias Stress in Self-Aligned Top- Gate Amorphous Indium-Zinc-Oxide Thin-Film Transistors" JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, vol. 15, no. 5, pp. 526-532, 2015-10
- 130 "Comparative Analysis on Positive Bias Stress-Induced Instability under High VGS/Low VDS and Low VGS/High VDS in Amorphous InGaZnO Thin-Film Transistors" JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, vol. 15, no. 5, pp.519-525, 2015-10
- 129 "Frequency-dependent C-V Characteristic-based Extraction of Interface Trap Density in Normally-off Gate-recessed AlGaN/GaN Heterojunction Field-effect Transistors" JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, vol. 15, no. 5, pp.497-503, 2015-10
- 128 "Modeling and Characterization of the Abnormal Hump in n-Channel Amorphous-InGaZnO Thin-Film Transistors After High Positive Bias Stress" IEEE Electron Device Letters, vol. 36, no. 10, pp.1047-1049, 2015-10
- 127 "A bottom-gate silicon nanowire field-effect transistor with functionalized palladium nanoparticles for hydrogen gas sensors" Solid-State Electronics, vol. 104 pp. 76-19, 2015-08
- 126 "Bias-Dependent Effective Channel Length for Extraction of Subgap DOS by Capacitance–Voltage Characteristics in Amorphous Semiconductor TFTs" IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 62. no. 8, pp. 2689-2694, 2015-08
- 125 "Study on the Photoresponse of Amorphous In−Ga−Zn−O and Zinc Oxynitride Semiconductor Devices by the Extraction of Sub-Gap- State Distribution and Device Simulation" ACS Appl. Mater. Interfaces, vol. 28. no. 7, pp. 15570-15577, 2015-06
- 124 "A Highly Responsive Silicon Nanowire/Amplifier MOSFET Hybrid Biosensor" Scientific Reports, Scientific Reports 5, 2015-07
- 123 "A Study on the Degradation of In–Ga–Zn–O Thin-Film Transistors Under Current Stress by Local Variations in Density of States and Trapped Charge Distribution" IEEE ELECTRON DEVICE LETTERS, vol. 36. no. 7, pp. 690-692, 2015-06
- 122 "Extraction of Propagation Delay-Correlated Mobility and Its Verification for Amorphous InGaZnO Thin-Film Transistor-Based Inverters" IEEE Transactions on Electron Devices , vol. 62. no. 5, pp. 1504-1510, 2015-05
- 121 "Effect of direct current sputtering power on the behavior of amorphous indium-galliumzinc- oxide thin-film transistors under negative bias illumination stress" Applied Physics Letters, vol. 106, p. 123505, 2015-04
- 120 "Sub-Bandgap Photonic Capacitance-Voltage Method for Characterization of the Interface Traps in Low Temperature Poly-Silicon Thin-Film Transistors" IEEE Electron Device Letters, vol. 36, no. 4, pp.339-341, 2015-04
- 119 "Modeling and Separate Extraction Technique for Gate Bias-Dependent Parasitic Resistances and Overlap Length in MOSFETs" IEEE Transactions on Electron Devices, vol. 62, no. 3, pp. 1063-1067, 2015-03
- 118 "TCAD-Based Simulation Method for the Electrolyte–Insulator–Semiconductor Field-Effect Transistor" IEEE Transactions on Electron Devices, vol. 62, no. 3, pp. 1072-1075, 2015-03
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