Prof. Kim`s R.P.

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  • 146 J. Jang, J. Kim, S. Kim, H.-S. Mo, D. M. Kim, S.-J. Choi, B.-G. Park, D. H. Kim, J. Park "Analysis and modeling on the pH-dependent current drift of Si nanowire ion-sensitive field effect transistor (ISFET)-based biosensors" Journal of Nanoscience and Nanotechnology, Vol. 17, NO. 5, pp. 3146–3150, DOI: 10.1166/jnn.2017.14037, 2017-05
  • 145 S. Kim, J. Kim, J. Jang, H.-S. Mo, D. M. Kim, S.-J. Choi, B.-G. Park, D. H. Kim, J. Park "Sampling time and pH-dependences of SiNW ISFET-based biosensors" Journal of Nanoscience and Nanotechnology, Vol. 17, NO. 5, pp. 3257-3260, DOI:10.1166/jnn.2017.14038, 2017-05
  • 144 D. H. Kim, S. Choi, J. Jang, H. Kang, D. M. Kim, S.-J. Choi, Y.-S. Kim, S. Oh, J. H. Baeck, J. U. Bae, K.-S. Park, S. Y. Yoon, and In B. Kang "Experimental decomposition of the positive bias temperature stress-induced instability in self-aligned coplanar InGaZnO thin-film transistors and its modeling based on the multiple stretched-exponenti" Journal of the SID(Society of Information Display), Vol. 25, No.2, pp.98-107, DOI : 10.1002/jsid.531, 2017-02
  • 143 H. Lee, J. Kim, S. Choi, S. K. Kim, J. Kim, J. Park, S.-J. Choi, D. H. Kim, D. M. Kim "Band-Bending Effect in the Characterization of Subgap Density-of-States in Amorphous TFTs Through Fully Electrical Techniques" IEEE Electron Device Letters, vol. 38, no. 2, DOI: 10.1109/LED.2016.2636301, 2017-02
  • 142 H. Lee, J. Kim, S. Choi, S. K. Kim, J. Kim, J. Park, S.-J. Choi, D. H. Kim, D. M. Kim "Band-Bending Effect in the Characterization of Subgap Density-of-States in Amorphous TFTs through Fully Electrical Techniques" IEEE Electron Device Letters, vol. 38, no. 2, DOI: 10.1109/LED.2016.2636301, 2017-02
  • 141 S. K. Kim, D.-M. Geum, J.-P. Shim, C. Z. Kim, H.-J. Kim, J. D. Song, W. J. Choi, S.-J. Choi, D. H. Kim, S. Kim, D. M. Kim "Fabrication and characterization of Pt/Al2O3/Y2O3/In0.53Ga0.47As MOSFETs with low interface trap density" Applied Physics Letters, vol. 110, no. 4, DOI: 10.1063/1.4974893, 2017-01
  • 140 J. Lee, J. Yoon, B. Choi, D. Lee, D. M. Kim, D. H. Kim, Y.-K. Choi, S.-J. Choi "Ink-jet printed semiconducting carbon nanotube ambipolar transistors and inverters with chemical doping technique using polyethyleneimine" Applied Physics Letters, vol. 109, no. 26, p. 263103, DOI: 10.1063/1.4973360, 2016-12
  • 139 J. Kim§, H. Lee§, S. K. Kim, J. Kim, J. Park, S.-J. Choi, D. H. Kim, D. M. Kim ( §These authors equally contributed to this work) "Hybrid Open Drain Method and Fully Current- Based Characterization of Asymmetric Resistance Components in a Single MOSFET" IEEE Transactions on Electron Devices, Vol. 63, no. 11, pp. 4196-4200, DOI: 10.1109/TED.2016.2607721, 2016-09
  • 138 J. Yoon§, J. Lee§, B. Choi§, D. Lee, D. H. Kim, D. M. Kim, D.-I. Moon, M. Lim, S. Kim, S.-J. Choi ( §These authors equally contributed to this work) "Flammable carbon nanotube transistors on a nitrocellulose paper substrate for transient electronics" Nano research, DOI: 10.1007/s12274-016-1268-6, 2016-09
  • 137 K. M. Lee, J. T. Jang, Y.-J. Baek, H. Kang, S. Choi, S.-J. Choi, D. M. Kim, C. J. Kang, T.-S. Yoon, H.-S. Mo, D. H. Kim "The γ -Fe2O3 Nanoparticle Assembly-Based Memristor Ratioed Logic and Its Optical Tuning" IEEE Electron Device Letters, Vol. 37, no. 8, pp. 986-989, DOI: 10.1109/LED.2016.2582523 , 2016-08
  • 136 H. M. Choi, D. J. Shin, J. H. Lee, H.-S. Mo, T. J. Park, B.-G. Park, D. M. Kim, S.-J. Choi, D. H. Kim, J. Park "The Analysis of Characteristics in Dry and Wet Environments of Silicon Nanowire-Biosensor" Journal of Nanoscience and Nanotechnology, vol. 16, no. 5, pp. 4901–4905, DOI: 10.1166/jnn.2016.12247, 2016-05
  • 135 J. Yoon, B. Choi, S. Choi, J. Lee, J. Lee, M. Jeon, Y Lee, J. Han, J. Lee, D. M. Kim, D. H. Kim, S. Kim, S.-J. Choi "Evaluation of interface trap densities and quantum capacitance in carbon nanotube network thin-film transistors" Nanotechnology, vol. 27, no. 29, p. 295704, DOI: 10.1088/0957-4484/27/29/295704, 2016-06
  • 134 S. K. Kim, J. Lee, D.-M. Geum, M.-S. Park, W. J. Choi, S.-J. Choi, D. H. Kim, S. Kim*, D. M. Kim* (*co-corresponding authors) "Fully Subthreshold Current-Based Characterization of Interface Traps and Surface Potential in III-V-on-Insulator MOSFETs" Solid-State Electronics, vol. 122, pp. 8-12, DOI: 10.1016/j.sse.2016.04.011, 2016-04
  • 133 S. Choi, H. Kim, C. Jo, H.-S. Kim, S.-J. Choi, D. M. Kim, J. Park, D. H. Kim "The Effect of Gate and Drain Fields on the Competition Between Donor-Like State Creation and Local Electron Trapping in In–Ga–Zn–O Thin Film Transistors Under Current Stress" IEEE Electron Device Letters, vol. 36, no. 12, pp. 1336-1339, 2015-12
  • 132 B. Choi, D. Lee, J.-H. Ahn, J. Yoon, J. Lee, M. Jeon, D. M. Kim, D. H. Kim , I. Park, Y.-K. Choi, and S.-J Choi "Investigation of optimal hydrogen sensing performance in semiconducting carbon nanotube network transistors with palladium electrodes" Applied Physics Letters, vol. 107, p. 193108, 2015-11
  • 131 J. Kim, S. Choi, J. Jang, J. T. Jang, J. Kim, S.-J. Choi, D. M. Kim, and D. H. Kim "Analysis of Instability Mechanism under Simultaneous Positive Gate and Drain Bias Stress in Self-Aligned Top- Gate Amorphous Indium-Zinc-Oxide Thin-Film Transistors" JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, vol. 15, no. 5, pp. 526-532, 2015-10
  • 130 H. Kang, J. T. Jang, J. Kim, S.-J. Choi, D. M. Kim, and D. H. Kim "Comparative Analysis on Positive Bias Stress-Induced Instability under High VGS/Low VDS and Low VGS/High VDS in Amorphous InGaZnO Thin-Film Transistors" JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, vol. 15, no. 5, pp.519-525, 2015-10
  • 129 Sungju Choi, Youngjin Kang, Jonghwa Kim, Jungmok Kim, Sung-Jin Choi, Dong Myong Kim, Ho-Young Cha, Hyungtak Kim, and Dae Hwan Kim "Frequency-dependent C-V Characteristic-based Extraction of Interface Trap Density in Normally-off Gate-recessed AlGaN/GaN Heterojunction Field-effect Transistors" JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, vol. 15, no. 5, pp.497-503, 2015-10
  • 128 Jungmin Lee, Sungju Choi, Seong Kwang Kim, Sung-Jin Choi, Dae Hwan Kim, Jisun Park, and Dong Myong Kim "Modeling and Characterization of the Abnormal Hump in n-Channel Amorphous-InGaZnO Thin-Film Transistors After High Positive Bias Stress" IEEE Electron Device Letters, vol. 36, no. 10, pp.1047-1049, 2015-10
  • 127 B. Choi, J.-H. Ahn, J. Lee, J. Yoon, J. Lee, M. Jeon, D. M. Kim, D. H. Kim, I. Park, S.-J. Choi "A bottom-gate silicon nanowire field-effect transistor with functionalized palladium nanoparticles for hydrogen gas sensors" Solid-State Electronics, vol. 104 pp. 76-19, 2015-08
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