Prof. Kim`s R.P.

Home > People > Professor > Prof. Kim`s R.P.

  • 85 M. Bae, D. Yun, Y. Kim, D. Kong, H. K. Jeong, W. Kim, J. Kim, I. Hur, D. H. Kim, and D. M. Kim "Differential Ideality Factor Technique for Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors" IEEE Electron Device Letters, vol.33, no. 3, pp. 339-401, 2012-03
  • 84 J. S. Shin H. Choi, H. Bae, J. Jang, D. Yun, E. Hong, D. H. Kim, and D. M. Kim "Vertical Gate Si/SiGe Double HBT-based Capacitorless 1T DRAM Cell for Extended Retention time at Low Latch Voltage" IEEE Electron Device Letters, vol.33, no. 2, pp. 134-136, 2012-02
  • 83 S. Kim, Y. W. Jeon, Y. Kim, D. Kong, H. K. Jung, M. Bae, J.-H. Lee, B. D. Ahn, S. Y. Park, J.-H. Park, J. Park, H.-I. Kwon, D. M. Kim, and D. H. Kim "Impact of Oxygen Flow Rate on the Instability under Positive Bias-Stresses in DC Sputtered Amorphous InGaZnO Thin-Film Transistors" IEEE Electron Device Letters, vol. 33, no. 1,pp. 62-64, 2012-01
  • 82 D. H. Kim, Y. W. Jeon, S. Kim, Y. Kim, Y. S. Yu, D. M. Kim, and H.-I. Kwon "Physical Parameter-Based SPICE Models for InGaZnO Thin Film Transistors Applicable to Process Optimization and Robust Circuit Design" IEEE Electron Device Letters, vol. 33, no. 1, pp. 59-61, 2012-01
  • 81 J. Jang, J. C. Park, D. Kong, D. M. Kim, J.-S. Lee, B.-H Sohn, I. H. Cho, and D. H. Kim "Endurance Characteristics of Amorphous-InGaZnO Transparent Flash Memory With Gold Nanocrystal Storage Layer" IEEE Trans. Electron Devices, vol. 58, no. 11, pp. 3940-3947, 2011-11
  • 80 J. S. Shin, H. Bae, J. Jang, D. Yun, J. Lee, D. H. Kim and D. M. Kim "A narrow bandgap SiGe channel superlattice bandgap engineered 1T DRAM cell for low voltage operation and extended hole retention time" Semiconductor Science and Technology, vol. 26, pp. 095025, 2011-08
  • 79 Y. W. Jeon, I. Hur, Y. Kim, M. Bae, H.-K. Jung, D. Kong, W. Kim, J. Kim, J. Jang, D. M. Kim, and D. H. Kim "Physics-Based SPICE Model of a-InGaZnO Thin-Film Transistor Using Verilog-A" Journal of Semiconductor Technology and Science, vol. 11, no. 3, 2011-09
  • 78 Y. Kim, M. Bae, D. Kong, H.-K. Jung, J. Kim, W. Kim, I. Hur, D. M. Kim, and D. H. Kim "Quantitative Analysis of Negative Bias Illumination Stress-Induced Instability Mechanisms in Amorphous InGaZnO Thin-Film Transistors" J. Korean Phys. Soc., vol. 59, no. 2, pp. 474~477, 2011-08
  • 77 D. Kong, H.-K. Jung, Y. Kim, M. Bae, J. Jang, J. Kim, W. Kim, I. Hur, D. M. Kim and D. H. Kim "Effect of the Active Layer Thickness on the Negative Bias Illumination Stress-induced Instability in Amorphous InGaZnO Thin-film Transistors" J. Korean Phys. Soc., vol. 59, no. 2, pp. 505-510, 2011-08
  • 76 D. H. Kim, D. Kong, S. Kim, Y. W. Jeon, Y. Kim, D. M. Kim, and H.-I. Kwon "AC stress-induced degradation of amorphous InGaZnO thin film transistor inverter" Japanese J. Appl. Phys., vol. 50, p. 090202, 2011-09
  • 75 D. Kong, H.-K. Jung, Y. Kim, M. Bae, Y. W. Jeon, S. Kim, D. M. Kim, and D. H. Kim "The Effect of the Active Layer Thickness on the Negative Bias Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors" IEEE Electron Device Lett., vol. 32, no. 10, pp. 1388-1390, 2011-10
  • 74 J.-H. Park, Y. Kim, S. Kim, H. Bae, D. H. Kim, and D. M. Kim "Surface Potential-Based Analytic DC I-V Model with Effective Electron Density for Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors Considering Parastic Resistance" IEEE Electron Device Letters., vol. 32, no. 11, pp. 1540-1542, 2011-11
  • 73 M. Bae, Y. Kim, D. Kong, H.-K. Jung, W. Kim, J. Kim, I. Hur, D. M. Kim, and D. H. Kim "Analytical Models for Drain Current and Gate Capacitance in Amorphous InGaZnO Thin Film Transistors with Effecitve Carrier Density" IEEE Electron Device Letters., vol. 32, no. 11, pp. 1546-1548, 2011-11
  • 72 M. Bae, Y. Kim, S. Kim, D. M. Kim, and D. H. Kim "Extraction of Subgap Donor States in a-IGZO TFTs by Generation-Recombination Current Spectroscopy" IEEE Electron Device Lett., vol. 32, no. 9, pp. 1248-1250, 2011-09
  • 71 D. Yun, M. Bae, J. Jang, H. Bae, J. S. Shin, E. Hong, J. Lee,D. H. Kim, and D. M. Kim "Differential Body Factor Technique for Characterization of Interface Trap in MOSFETs" IEEE Electron Device Lett., vol. 32, no. 9, pp. 1206-1208, 2011-09
  • 70 J. S. Shin, H. Bae, J. Jang, D. Yun, J. Lee, E. Hong, D. H. Kim, and D. M. Kim "A Novel Double HBT-based Capacitorless 1T DRAM Cell with Si/SiGe Heterojunctions" IEEE Electron Device Lett., vol. 32, no. 7, pp. 850-852, 2011-07
  • 69 H. Bae, J. Jang, J. S. Shin, D. Yun, J. Lee, T. W. Kim, D. H. Kim, and D. M. Kim "Modeling and Separate Extraction of Gate Bias- and Channel Length-Dependent Intrinsic and Extrinsic Source-Drain Resistances in MOSFETs" IEEE Electron Device Lett., vol. 32, no. 6, pp. 722-724, 2011-06
  • 68 H. Bae, S. Kim, M.-K. Bae, J. S. Shin, D. Kong, H.-K. Jung, J. Jang, J. Lee, D. H. Kim, and D. M. Kim "Extraction of Separated Source and Drain Resistances in Amorphous Indium-Gallium-Zinc-Oxide TFTs through C-V Characterization" IEEE Electron Device Lett., vol. 32, no. 6, pp. 761-763, 2011-06
  • 67 J. Lee, J. H. Lee, I.-Y. Chung, C.-J. Kim, B.-G. Park, D. M. Kim, and D. H. Kim "Comparative Study on Energy-Efficiencies of Single-Electron Transistor-Based Binary Full Adders Including Non-Ideal Effects" IEEE Transactions on Nanotechnology., vol. 10, no. 5, pp. 1180-1190, 2011-09
  • 66 S. Lee, J. S. Shin, J. Jang, H. Bae, D. Yun, D. H. Kim, and D. M. Kim "A Novel Capacitorless DRAM Cell unsing Superlattice Band-gap Engineered(SBE) Structure with 30nm Channel Length" IEEE Transactions on Nanotechnology., vol. 10, no. 5, pp. 1023-1030, 2011-09
Prev12345678910Next>>
개인정보 처리방침