77D. Kong, H.-K. Jung, Y. Kim, M. Bae, J. Jang, J. Kim, W. Kim, I. Hur, D. M. Kim and D. H. Kim"Effect of the Active Layer Thickness on the Negative Bias Illumination Stress-induced Instability in Amorphous InGaZnO Thin-film Transistors"J. Korean Phys. Soc., vol. 59, no. 2, pp. 505-510, 2011-08
76D. H. Kim, D. Kong, S. Kim, Y. W. Jeon, Y. Kim, D. M. Kim, and H.-I. Kwon"AC stress-induced degradation of amorphous InGaZnO thin film transistor inverter"Japanese J. Appl. Phys., vol. 50, p. 090202, 2011-09
75D. Kong, H.-K. Jung, Y. Kim, M. Bae, Y. W. Jeon, S. Kim, D. M. Kim, and D. H. Kim"The Effect of the Active Layer Thickness on the Negative Bias Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors"IEEE Electron Device Lett., vol. 32, no. 10, pp. 1388-1390, 2011-10
74J.-H. Park, Y. Kim, S. Kim, H. Bae, D. H. Kim, and D. M. Kim"Surface Potential-Based Analytic DC I-V Model with Effective Electron Density for Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors Considering Parastic Resistance"IEEE Electron Device Letters., vol. 32, no. 11, pp. 1540-1542, 2011-11
73M. Bae, Y. Kim, D. Kong, H.-K. Jung, W. Kim, J. Kim, I. Hur, D. M. Kim, and D. H. Kim"Analytical Models for Drain Current and Gate Capacitance in Amorphous InGaZnO Thin Film Transistors with Effecitve Carrier Density"IEEE Electron Device Letters., vol. 32, no. 11, pp. 1546-1548, 2011-11
72M. Bae, Y. Kim, S. Kim, D. M. Kim, and D. H. Kim"Extraction of Subgap Donor States in a-IGZO TFTs by Generation-Recombination Current Spectroscopy"IEEE Electron Device Lett., vol. 32, no. 9, pp. 1248-1250, 2011-09
71D. Yun, M. Bae, J. Jang, H. Bae, J. S. Shin, E. Hong, J. Lee,D. H. Kim, and D. M. Kim"Differential Body Factor Technique for Characterization of Interface Trap in MOSFETs"IEEE Electron Device Lett., vol. 32, no. 9, pp. 1206-1208, 2011-09
70J. S. Shin, H. Bae, J. Jang, D. Yun, J. Lee, E. Hong, D. H. Kim, and D. M. Kim"A Novel Double HBT-based Capacitorless 1T DRAM Cell with Si/SiGe Heterojunctions"IEEE Electron Device Lett., vol. 32, no. 7, pp. 850-852, 2011-07
69H. Bae, J. Jang, J. S. Shin, D. Yun, J. Lee, T. W. Kim, D. H. Kim, and D. M. Kim"Modeling and Separate Extraction of Gate Bias- and Channel Length-Dependent Intrinsic and Extrinsic Source-Drain Resistances in MOSFETs"IEEE Electron Device Lett., vol. 32, no. 6, pp. 722-724, 2011-06
68H. Bae, S. Kim, M.-K. Bae, J. S. Shin, D. Kong, H.-K. Jung, J. Jang, J. Lee, D. H. Kim, and D. M. Kim"Extraction of Separated Source and Drain Resistances in Amorphous Indium-Gallium-Zinc-Oxide TFTs through C-V Characterization"IEEE Electron Device Lett., vol. 32, no. 6, pp. 761-763, 2011-06
67J. Lee, J. H. Lee, I.-Y. Chung, C.-J. Kim, B.-G. Park, D. M. Kim, and D. H. Kim"Comparative Study on Energy-Efficiencies of Single-Electron Transistor-Based Binary Full Adders Including Non-Ideal Effects"IEEE Transactions on Nanotechnology., vol. 10, no. 5, pp. 1180-1190, 2011-09
66S. Lee, J. S. Shin, J. Jang, H. Bae, D. Yun, D. H. Kim, and D. M. Kim"A Novel Capacitorless DRAM Cell unsing Superlattice Band-gap Engineered(SBE) Structure with 30nm Channel Length"IEEE Transactions on Nanotechnology., vol. 10, no. 5, pp. 1023-1030, 2011-09
65J.-H. Park , H.-K. Jung, S. Kim, S. Lee, D. H. Kim, and D. M. Kim"Empirical Modeling and Extraction of Parasitic Resistance in Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors"IEEE Transactions on Electron Devices, vol. 58, no. 8, pp. 2796-2799, 2011-08
64S. W. Lee, Y. W. Jeon, S. Kim, D. Kong, D. H. Kim, and D. M. Kim"Comparative Study of Quasi-Static and Normal Capacitance-Voltage Characteristics in Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors"Solid-State Electronics, vol. 56, no. 1, pp. 95-99, 2011-02
63E. Chong, Y. W. Jeon, Y. S. Chun, D. H. Kim, and D. M. Kim"Design of Noncoplanar Diagonal Electrode Structure for Oxide Thin-Film Transistor"IEEE Electron Device Letters, vol. 32, no. 1, pp. 39-41, 2011-01
62K. Y. Kim, J. M. Jang, D. Y. Yun, D. M. Kim, D. H. Kim"Comparative Study in the Structural Dependence of Logic Gate Delays in Double-Gate and Tripple-Gate FinFETs"Journal of Semiconductor Technology and Science, vol. 10, no. 2, pp. 1385-1388, 2010-06
61H. Bae, S. C. Baek, S. Lee, J. Jang, J. S. Shin, D. Yun, H. Kim, D. H. Kim, and D. M. Kim"Separate Extraction of Source, Drain, and Substrate Resistances in MOSFETs with Parasitic Junction Current Method"IEEE Electron Device. Letters., vol. 31, no. 11, pp. 1190-1192, 2010-11
60Y. W. Jeon, S. Kim, S. Lee, D. M. Kim, D. H. Kim, J. Park, C. J. Kim, I. Song, Y. Park, U-I. Chung, J.-H. Lee, B. D. Ahn, S. Y. Park, J.-H. Park and J. H. Kim"Subgap Density of States-Based Amorphous Oxide Thin Film Transistor Simulator (DeAOTS)"IEEE Transactions on Electron Devices, vol. 57, no. 1, pp. 2988-3000, 2010-11
59S. Kim, Y. W. Jeon, J.-H. Lee, B. D. Ahn, S. Y. Park, J.-H. Park, J. H. Kim, J. Park, D. M. Kim, and D. H. Kim"Relation between Low Frequency Noise and Subgap Density of States in Amorphous InGaZnO Thin Film Transistors"IEEE Electron Device. Letters., vol. 31, no. 11, pp. 1236-1238, 2010-11
58S. Lee, Y. W. Jeon, T.-J. K. Liu, D. H. Kim, and D. M. Kim"A Novel Self-Aligned 4-Bit SONOS-Type Nonvolatile Memory Cell With T-Gate and I-Shaped FinFET Structure"IEEE Transactions on Electron Devices., vol. 57, no. 8, pp. 1728-1736, 2010-08