Prof. Kim`s R.P.

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  • 217 D. Kang, J. T. Jang, D. M. Kim, S.-J. Choi, J.-H. Bae, and D. H. Kim "Short-term and Long-term Memory operations of a-IGZO Synaptic TFTs with the low-temperature ALD Al2O3 gate insulator and Metal Floating Gate" The 28th Korean Conference on Semiconductors, 2021-01
  • 216 J.-H. Kim, J. T. Jang, D. M. Kim, S.-J. Choi, J.-H. Bae, and D. H. Kim "Influence of the oxygen content on hot carrier effects in the bottom-gate amorphous InGaZnO thin-film transistors" The 28th Korean Conference on Semiconductors, 2021-01
  • 215 J. H. Ryu*, H. B. Yoo*, J. Yu, H. Kim, J.-H. Bae, S.-J. Choi, D. H. Kim, and D. M. Kim(*These authors equally contributed to this work) "Extraction of Interface Traps over the Bandgap through Photovoltaic and Photoconductive Effects in Si MOSFETs under Optical Excitation" The 28th Korean Conference on Semiconductors, 2021-01
  • 214 G. W. Yang, J. Park, S. Choi, D. M. Kim, S.-J. Choi, J.-H. Bae, and D. H. Kim "Experimental Observation of the Variation of Oxygen Vacancy-Related Density of States in InGaZnO TFTs under the Negative Bias Illumination Stress" The 28th Korean Conference on Semiconductors, 2021-01
  • 213 Y. Lee1, J. W. Jeon1, J. Kim1, D. H. Kim1, D. M. Kim1, M.-H. Kang2, and S.-J. Choi1(1 School of EE, Kookmin University, 2 Department of Nano-process, NNFC) "Rapid thermal annealed carbon nanotube network transistors for physical unclonable function applications" The 28th Korean Conference on Semiconductors, 2021-01
  • 212 H. Lee†, J. Park†, S.-J. Choi, J.-H. Bae, D. M. Kim, and D. H. Kim(†These authors equally contributed to this work) "The IGZO-based Correlated Color Temperature Sensor for Measuring the Melatonin Suppression and the Circadian Disturbance" The 28th Korean Conference on Semiconductors, 2021-01
  • 211 J. W. Jeon1, Y. Lee1, G.-H. Park1, J. Kirn1, D. M. Kim1, D. H. Kim1, M.-H. Kang2, and S.-J. Choi1(1 School of EE, Kookmin University, 2 Department of Nano-process, NNFC) "Wafer-Scale Striped Carbon Nanotube Network Transistor" The 28th Korean Conference on Semiconductors, 2021-01
  • 210 I. Chae, J. T. Jang, S. Park, W. S. Choi, J.-H. Bae, S.-J. Choi, D. M. Kim, and D. H. Kim "Effect of the ALD temperature on switching characteristic in Cu-based CBRAM with the solid electrolyte of Al2O3" The 28th Korean Conference on Semiconductors, 2021-01
  • 209 W. S. Choi, J. T. Jang, T. J. Yang, S.-J. Choi, J.-H. Bae, D. M. Kim, and D. H. Kim "Improvement of the linearity of synaptic behavior of IGZO memristor by combining the IGZO synaptic transistor" The 28th Korean Conference on Semiconductors, 2021-01
  • 208 S. Choi, J. Kim, J. Yoon, I. Chae, S. -J. Choi, D. M. Kim, H. S. Mo, and D. H. Kim "The Module of Gain-controllable Amplifier Readout Circuits based on Si Nanowire ISFET for Biochips for Optimization of Dynamic Range, Linearity, and Resolution" EEE 49th ESSDERC, pp. 110-113, DOI : 978-1-7281-1539-9/19/$31.00, 2019-09
  • 207 J. T. Jang, J. Min, D. Kim, J. Park, S.-J. Choi, D. M. Kim, and D. H. Kim "SPICE compact model of IGZO memristor based on non-quasi statically updated Schottky barrier height" IEEE International Conference on Nanotechnology, 2019-07
  • 206 Y. Lee, J. Yoon, H.-J. Kim, G.-H. Park, D. H. Kim, D. M. Kim, M.-H. Kang* and S.-J. Choi*(*co-corresponding authors) "Carbon Nanotube Network Transistor for a Physical Unclonable Functions-based Security Device" The 19th IEEE International Conference on Nanotechnology, 2019-07
  • 205 S. Park†, J. T. Jang†, S.-J. Choi, D. M. Kim and D. H. Kim*( †These authors equally contributed to this work) "Synaptic behavior of flexible IGZO TFTs with Al2O3 gate insulator by low temperature ALD" The 19th IEEE International Conference on Nanotechnology, 2019-07
  • 204 Y. Seo, H. Jung, S. Park, J. T. Jang, S. Choi, D. M. Kim, S.-J. Choi, D. H. Kim "Subgap DOS-based analysis on the electrical/mechanical stress-induced degradation of flexible IGZO TFTs" The 26th Korean Conference on Semiconductors, 2019-02
  • 203 G.-H. Park, Y. Kim, B. Choi, J. Yoon, Y. Lee, J. Park, H.-J. Kim, M.-H. Kang, D. M. Kim, D. H. Kim, S.-J. Choi "High-performance semiconducting carbon nanotube thin-film transistors with a porous gate dielectric layer" The 26th Korean Conference on Semiconductors, 2019-02
  • 202 H.-J. Kim, B. Choi, J. Yoon, Y. Lee, M.-H. Kang, D. M. Kim, D. H. Kim, S.-J. Choi "Flexible 99% semiconducting carbon nanotube network transistors for hydrogen sensor application" The 26th Korean Conference on Semiconductors, 2019-02
  • 201 Y. Lee†, H. Jung†, J. Yoon, J. T. Jang, B. Choi, H.-J. Kim, G.-H. Park, M.-H. Kang, D. M. Kim, D. H. Kim*, S.-J. Choi*( †These authors equally contributed to this work)(*co-corresponding authors) "Hybrid integration of carbon nanotube and amorphous InGaZnO thin-film transistors" The 26th Korean Conference on Semiconductors, 2019-02
  • 200 J. Min, J. T. Jang, D. Kim, J. Park, S.-J. Choi, D. M. Kim, D. H. Kim "Demonstration of both the digital and analog memory operations of the IGZO resistive-switching devices by a control of metal electrode/IGZO combination" The 26th Korean Conference on Semiconductors, 2019-02
  • 199 J. Park, J. T. Jang, D. Kim, J. Min, G. Ahn, S.-J Choi, D. M. Kim, H.-S. Mo, D. H. Kim "Empirical Model of Relationship between the Operation Frequency and the Size of Crossbar Array in the IGZO ReRAM-based Reconfigurable Logic" The 26th Korean Conference on Semiconductors, 2019-02
  • 198 J. T. Jang, J. Min, D. Kim, J. Park, S.-J. Choi, D. M. Kim, D. H. Kim "SPICE compact model of the IGZO memristor considering both the metal electrode and the process sequence of the deposition of metal and IGZO film" The 26th Korean Conference on Semiconductors, 2019-02
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