30D. H. Kim"Coupled parallel quantum dots in silicon-on-insulator metal-oxide-semiconductor field-effect transistors"Physica E, vol. 33, pp. 273-279, 2006-03
29J. B. Choi, S. H. Seo, J. U. Lee, G. C. Kang, S. W. Kim, K. S. Roh, K. Y. Kim, C. H. Lee, S. Y. Lee, H. T. Kim, D. H. Kim, K. S. Min, D. J. Kim, D. W. Kang, J. K. Rhee, and D. M. Kim"Sub-bandgap Optical GIDL Current Method for Extracting the Interface States in the Gate-to-Drain Overlapped Region of MOSFETs"J. of the Korean Phys. Soc., vol. 49, no. 4, pp. 1565-1570, 2006-10
28S. W. Kim, J. U. Lee, G. C. Kang, K. S. Roh, S. H. Seo, K. Y. Kim, C. H. Lee, S. Y. Lee, H. T. Kim, D. H. Kim, K. S. Min, D. J. Kim, D. W. Kang, J. K Rhee, and D. M. Kim"Sub-Bandgap Photonic Base Current Method for Extracting the Trap Density at Heterointerfaces in Heterojunction Bipolar Transistors"J. of the Korean Phys. Soc., vol. 49, no. 4, pp. 1558-1564, 2006-10
27Y. S. Yu, D. H. Kim, J. D. Lee, B.-G. Park, S. W. Hwang, and D. Ahn"Transport Spectroscopy of A Quantum Dot in a Silicon-on-Insulator (SOI) MOSFET"Journal of Korean Physical Society, vol. 50, no. 3, pp. 885-888, 2007-03
26K. R. Kim, D. H. Kim, K.-W. Song, G. Baek, H. H. Kim, J. I. Huh, J. D. Lee, and B. G. Park"Silicon-Based Field-Induced Band-to-band Tunneling Effect Transistor"IEEE Electron Device Letters, vol. 25, no. 6, pp. 439-441, 2004-06
25K. R. Kim, K.-W. Song, D. H. Kim, G. Baek, H. H. Kim, J. I. Huh, J. D. Lee, B.-G. Park"Analytical Modeling of Realistic Single-Electron Transistors Based on Metal-Oxide-Semiconductor Structure with a Unique Distribution Function in the Coulomb-Blockade Oscillation Region"Jpn. J. Appl. Phys., vol. 43, pp. 2031-2035, Part 1, no. 4B, 2004-04
24K. R. Kim, D. H. Kim, J. D. Lee, B.-G. Park"Coulomb Oscillations Based on Band-to-band Tunneling in a Degenerately Doped Silicon Metal-Oxide-Semiconductor Field-Effect Transistor"Appl. Phys. Lett., vol. 84, no. 16, pp. 3178~3180, 2004-04
23K.-W. Song, K. R. Kim, J. D. Lee, B.-G. Park, S.-H. Lee, and D. H. Kim"A SPICE Model of Realistic Single-Electron Transistors and Its Application to Multiple-Valued Logic"Journal of Korean Physical Society, vol. 44, no. 1, pp. 121-124, 2004-01
22B.-G. Park, D. H. Kim, K. R. Kim, K.-W. Song, J. D. Lee"Single-electron transistors fabricated with sidewall spacer patterning"Superlattices and Microstructures, vol. 34, pp. 231-239, 2003-09
21K.-H. Chung, W. Y. Choi, S.-K. Sung, D. H. Kim, J. D. Lee, and B.-G. Park"Pattern multiplication method and the uniformity of nanoscale multiple lines"J. Vac. Sci. Technol. B., vol. 21, Issues 4, pp. 1491-1495, 2003-07
20S.-H. Seo, S.-W. Kim , J.-U. Lee, G.-C. Kang, K.-S. Roh, K.-Y. Kim , S.-Y. Lee, C.-M. Choi, K.-J. Song, S.-R. Park, J.-H. Park, K.-C. Jeon, D. M. Kim, D. H. Kim , H. Shin, J. D. Lee and B-G. Park"Channel width dependence of hot electron injection program/hot hole erase cycling behavior in silicon-oxide-nitride-oxide-silicon (SONOS) memories"Solid-State Electronics, vol. 52, Issue 6, pp. 844-848, 2008-01
19D. H. Kim, S.-K. Sung, K. R. Kim, J. D. Lee, and B.-G. Park"Single-Electron Transistors Based on Gate-Induced Si Island for Single-Electron Logic Application"IEEE Transactions on Nanotechnology, vol. 1, no. 4, pp. 170-175, 2002-12
18S.-H. Lee, D. H. Kim, K. R. Kim, J. D. Lee, B.-G. Park, Y.-J. Gu, G.-Y. Yang, and J.-T. Kong"A Practical SPICE Model Based on the Physics and Characteristics of Realistic Single-Electron Transistors"IEEE Transactions on Nanotechnology, vol. 1, no. 4, pp. 226-232, 2002-12
17D. H. Kim, S.-K. Sung, K. R. Kim, J. D. Lee, B.-G. Park, B. H. Choi, S. W. Hwang and D. Ahn"Single-Electron Transistors with Sidewall Depletion Gates on an SOI Nanowire and Their Application to Single-Electron Inverters"Journal of The Korean Physical Society, vol. 41, no. 4, pp. 505-508, 2002-10
16K. R. Kim, D. H. Kim, S.-K. Sung, J. D. Lee, and B.-G. Park"Negative-Differential Transconductance Characteristics at Room Temperature in 30-nm Square-Channel SOI nMOSFETs With a Degenerately Doped Body"IEEE Electron Device Letters, vol. 23, no. 10, pp. 612-614, 2002-10
15D. H. Kim, S.-K. Sung, K. R. Kim, J. D. Lee, and B.-G. Park"Fabrication of single-electron tunneling transistors with an electrically formed Coulomb island in a silicon-on-insulator nanowire"J. Vac. Sci. Technol. B., vol. 20, Issues 4, pp. 1410-1418, 2002-07
14B. H. Choi, S. H. Son, K. H. Cho, S.W. Hwang, D. Ahn, D. H. Kim, J. D. Lee, B. G. Park"Direct observation of excited states in double quantum dot silicon single electron transistor"Microelectronic Engineering, vol. 63, Issues 1-3, pp. 129-133, 2002-07
13K.-H. Chung, S.-K. Sung, D. H. Kim, W. Y. Choi, C. A. Lee, J. D. Lee and B.-G. Park"Nanoscale Multi-Line Patterning Using Sidewall Structure"Jpn. J. Appl. Phys., vol. 41, pp. 4410-4414, Part 1, no. 6B, 2002-06
12B. H. Choi, Y. S. Yu, D. H. Kim, S. H. Son, K. H. Cho, S. W. Hwang, D. Ahn, and B. G. Park"Double-dot-like charge transport through a small size silicon single electron transistor"Physica E, vol. 13, pp. 946-949, 2002-03
11D. H. Kim, K. R. Kim, S. K. Sung, J. D. Lee, and B.-G. Park"Dynamic exclusive-OR gate based on gate-induced Si island single electron transistor"IEE Electronics Letters, vol. 38, no. 11, pp. 527~529, 2002-05