Prof. Kim`s R.P.

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  • 29 J. B. Choi, S. H. Seo, J. U. Lee, G. C. Kang, S. W. Kim, K. S. Roh, K. Y. Kim, C. H. Lee, S. Y. Lee, H. T. Kim, D. H. Kim, K. S. Min, D. J. Kim, D. W. Kang, J. K. Rhee, and D. M. Kim "Sub-bandgap Optical GIDL Current Method for Extracting the Interface States in the Gate-to-Drain Overlapped Region of MOSFETs" J. of the Korean Phys. Soc., vol. 49, no. 4, pp. 1565-1570, 2006-10
  • 28 S. W. Kim, J. U. Lee, G. C. Kang, K. S. Roh, S. H. Seo, K. Y. Kim, C. H. Lee, S. Y. Lee, H. T. Kim, D. H. Kim, K. S. Min, D. J. Kim, D. W. Kang, J. K Rhee, and D. M. Kim "Sub-Bandgap Photonic Base Current Method for Extracting the Trap Density at Heterointerfaces in Heterojunction Bipolar Transistors" J. of the Korean Phys. Soc., vol. 49, no. 4, pp. 1558-1564, 2006-10
  • 27 Y. S. Yu, D. H. Kim, J. D. Lee, B.-G. Park, S. W. Hwang, and D. Ahn "Transport Spectroscopy of A Quantum Dot in a Silicon-on-Insulator (SOI) MOSFET" Journal of Korean Physical Society, vol. 50, no. 3, pp. 885-888, 2007-03
  • 26 K. R. Kim, D. H. Kim, K.-W. Song, G. Baek, H. H. Kim, J. I. Huh, J. D. Lee, and B. G. Park "Silicon-Based Field-Induced Band-to-band Tunneling Effect Transistor" IEEE Electron Device Letters, vol. 25, no. 6, pp. 439-441, 2004-06
  • 25 K. R. Kim, K.-W. Song, D. H. Kim, G. Baek, H. H. Kim, J. I. Huh, J. D. Lee, B.-G. Park "Analytical Modeling of Realistic Single-Electron Transistors Based on Metal-Oxide-Semiconductor Structure with a Unique Distribution Function in the Coulomb-Blockade Oscillation Region" Jpn. J. Appl. Phys., vol. 43, pp. 2031-2035, Part 1, no. 4B, 2004-04
  • 24 K. R. Kim, D. H. Kim, J. D. Lee, B.-G. Park "Coulomb Oscillations Based on Band-to-band Tunneling in a Degenerately Doped Silicon Metal-Oxide-Semiconductor Field-Effect Transistor" Appl. Phys. Lett., vol. 84, no. 16, pp. 3178~3180, 2004-04
  • 23 K.-W. Song, K. R. Kim, J. D. Lee, B.-G. Park, S.-H. Lee, and D. H. Kim "A SPICE Model of Realistic Single-Electron Transistors and Its Application to Multiple-Valued Logic" Journal of Korean Physical Society, vol. 44, no. 1, pp. 121-124, 2004-01
  • 22 B.-G. Park, D. H. Kim, K. R. Kim, K.-W. Song, J. D. Lee "Single-electron transistors fabricated with sidewall spacer patterning" Superlattices and Microstructures, vol. 34, pp. 231-239, 2003-09
  • 21 K.-H. Chung, W. Y. Choi, S.-K. Sung, D. H. Kim, J. D. Lee, and B.-G. Park "Pattern multiplication method and the uniformity of nanoscale multiple lines" J. Vac. Sci. Technol. B., vol. 21, Issues 4, pp. 1491-1495, 2003-07
  • 20 S.-H. Seo, S.-W. Kim , J.-U. Lee, G.-C. Kang, K.-S. Roh, K.-Y. Kim , S.-Y. Lee, C.-M. Choi, K.-J. Song, S.-R. Park, J.-H. Park, K.-C. Jeon, D. M. Kim, D. H. Kim , H. Shin, J. D. Lee and B-G. Park "Channel width dependence of hot electron injection program/hot hole erase cycling behavior in silicon-oxide-nitride-oxide-silicon (SONOS) memories" Solid-State Electronics, vol. 52, Issue 6, pp. 844-848, 2008-01
  • 19 D. H. Kim, S.-K. Sung, K. R. Kim, J. D. Lee, and B.-G. Park "Single-Electron Transistors Based on Gate-Induced Si Island for Single-Electron Logic Application" IEEE Transactions on Nanotechnology, vol. 1, no. 4, pp. 170-175, 2002-12
  • 18 S.-H. Lee, D. H. Kim, K. R. Kim, J. D. Lee, B.-G. Park, Y.-J. Gu, G.-Y. Yang, and J.-T. Kong "A Practical SPICE Model Based on the Physics and Characteristics of Realistic Single-Electron Transistors" IEEE Transactions on Nanotechnology, vol. 1, no. 4, pp. 226-232, 2002-12
  • 17 D. H. Kim, S.-K. Sung, K. R. Kim, J. D. Lee, B.-G. Park, B. H. Choi, S. W. Hwang and D. Ahn "Single-Electron Transistors with Sidewall Depletion Gates on an SOI Nanowire and Their Application to Single-Electron Inverters" Journal of The Korean Physical Society, vol. 41, no. 4, pp. 505-508, 2002-10
  • 16 K. R. Kim, D. H. Kim, S.-K. Sung, J. D. Lee, and B.-G. Park "Negative-Differential Transconductance Characteristics at Room Temperature in 30-nm Square-Channel SOI nMOSFETs With a Degenerately Doped Body" IEEE Electron Device Letters, vol. 23, no. 10, pp. 612-614, 2002-10
  • 15 D. H. Kim, S.-K. Sung, K. R. Kim, J. D. Lee, and B.-G. Park "Fabrication of single-electron tunneling transistors with an electrically formed Coulomb island in a silicon-on-insulator nanowire" J. Vac. Sci. Technol. B., vol. 20, Issues 4, pp. 1410-1418, 2002-07
  • 14 B. H. Choi, S. H. Son, K. H. Cho, S.W. Hwang, D. Ahn, D. H. Kim, J. D. Lee, B. G. Park "Direct observation of excited states in double quantum dot silicon single electron transistor" Microelectronic Engineering, vol. 63, Issues 1-3, pp. 129-133, 2002-07
  • 13 K.-H. Chung, S.-K. Sung, D. H. Kim, W. Y. Choi, C. A. Lee, J. D. Lee and B.-G. Park "Nanoscale Multi-Line Patterning Using Sidewall Structure" Jpn. J. Appl. Phys., vol. 41, pp. 4410-4414, Part 1, no. 6B, 2002-06
  • 12 B. H. Choi, Y. S. Yu, D. H. Kim, S. H. Son, K. H. Cho, S. W. Hwang, D. Ahn, and B. G. Park "Double-dot-like charge transport through a small size silicon single electron transistor" Physica E, vol. 13, pp. 946-949, 2002-03
  • 11 D. H. Kim, K. R. Kim, S. K. Sung, J. D. Lee, and B.-G. Park "Dynamic exclusive-OR gate based on gate-induced Si island single electron transistor" IEE Electronics Letters, vol. 38, no. 11, pp. 527~529, 2002-05
  • 10 S.-K. Sung, D. H. Kim, J.-S. Sim, K. R. Kim, Y. K. Lee, J. D. Lee, S. D. Chae, B. M. Kim, and B.-G. Park "Single-Electron MOS Memory with a Defined Quantum Dot Based on Conventional VLSI Technology" Jpn. J. Appl. Phys., vol. 41, Part 1, no. 4B, pp. 2606-2610, 2002-04
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