Prof. Bae`s R.P.

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  • 28 S.-T. Lee, H. Kim, J.-H. Bae, H. Yoo, N. Y. Choi, D. Kwon, S. Lim, B.-G. Park, J.-H. Lee "High-Density and Highly-Reliable Binary Neural Networks Using NAND Flash Memory Cells as Synaptic Devices" 2019 IEEE International Electron Devices Meeting (IEDM), San Francisco, 2019-12
  • 27 J.-H. Lee, S. Y. Woo, S.-T. Lee, S. Lim, W.-M. Kang, Y.-T. Seo, S. Lee, D. Kwon, S. Oh, Y. Noh, H. Kim, J. Kim, J.-H. Bae "Review of candidate devices for neuromorphic applications" 49th European Solid-State Device Research Conference (ESSDERC 2019), 2019-09
  • 26 S. Lim, D. Kwon, S.-T. Lee, H. Kim, J-H. Bae and J.-H. Lee "Investigation of Neural Networks Using Synapse Arrays Based on Gated Schottky Diodes" 2019 International Joint Conference on Neural Networks (IJCNN), 2019-07
  • 25 W.-M. Kang, C.-H. Kim, S. Lee, S. Y. Woo, J.-H. Bae, B.-G. Park, and J.-H. Lee "A Spiking Neural Network with a Global Self-Controller for Unsupervised Learning Based on Spike-Timing-Dependent Plasticity Using Flash Memory Synaptic Devices" 2019 International Joint Conference on Neural Networks (IJCNN), 2019-07
  • 24 S. Y. Woo, W.-M. Kang, K.-B. Choi, J. Kim, C.-H. Kim, J.-H. Bae, B.-G. Park, and J.-H. Lee "Analyzation of Positive Feedback device with Steep Subthreshold Swing Characteristics in 14 nm FinFET Technology" 2019 Electron Devices Technology and Manufacturing Conference (EDTM), 2019-03
  • 23 S.-T. Lee, S. Lim, J.-H. Bae, D. Kwon, H.-S. Kim, B.-G. Park, and J.-H. Lee "Dot Product Engine Using Gated Schottky Diode with Quantized Weight" 2019 Electron Devices Technology and Manufacturing Conference (EDTM), 2019-03
  • 22 Y. Hong, S. Hong, D. Jang, Y. Jeong, M. Wu, G. Jung, J.-H. Bae, J. S. Kim, K. S. Chang, C. B. Jeong, C. S. Hwang, B.-G. Park, J.-H. Lee "A Si FET-type Gas Sensor with Pulse-driven Localized Micro-heater for Low Power Consumption" 2018 IEEE International Electron Devices Meeting (IEDM), 2018-12
  • 21 S. Hong, J. Shin, Y. Hong, M. Wu, Y. Jeong, J.-H. Bae, and J.-H. Lee "A Novel FET-type Hydrogen Gas Sensor with Pd-decorated Single-Walled Carbon Nanotubes by Electroplating Method" 17th International Meeting on Chemical Sensors (IMCS), 2018-07
  • 20 S. Lim, J.-H. Bae, and J.-H. Lee "Input voltage modulation for hardware-based neural networks using NOR-type flash memory cells" 2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), 2018-07
  • 19 H.-J. Kang, N. Choi, D. H. Lee, T. Lee, S. Chung, J.-H. Bae, B.-G. Park and J.-H. Lee "Space Program Scheme for 3-D NAND Flash Memory Specialized for the TLC Design" Symposia on VLSI Technology and Circuits (VLSIT), 2018-06
  • 18 S.-T. Lee, S. Lim, N. Choi, J.-H. Bae, C.-H. Kim, S. Lee, D. H. Lee, T. Lee, S. Chung, B.-G. Park and J.-H. Lee "Neuromorphic Technology Based on Charge Storage Memory Devices" Symposia on VLSI Technology and Circuits (VLSIT), 2018-06
  • 17 J.-H. Bae, S. Lim, D. Kwon, S. Lee, B.-G. Park and J.-H. Lee "Investigation of Current Saturation and Short Channel Effect in Gated Schottky Diode-type Synaptic Device under Reverse Bias Condition" IEEE Silicon Nanoelectronics Workshop (SNW), 2018-06
  • 16 S. Lim, J.-H. Bae, J.-H. Eum, S. Lee, C.-H. Kim, D. Kwon, and J.-H. Lee "Hardware-Based Neural Networks Using Gated Schottky Diode as Synapse Device" 2018 IEEE International Symposium on Circuits and Systems (ISCAS), 2018-05
  • 15 J.-H. Bae, S. Lim, J.-H. Eum, B.-G. Park, J.-H. Lee "Behavior Analysis of Gated Schottky Diode as a Synaptic Device" The 25th Korean Conference on Semiconductors (KCS), 2018-02
  • 14 S. Lim, J.-H. Eum, J.-H. Bae, B.-G. Park, and J.-H. Lee "Design of Forward Propagation Using Gated Schottky Diodes" The 25th Korean Conference on Semiconductors (KCS), 2018-02
  • 13 D. Kwon, J.-H. Bae, S. Lim, J.-H. Um, S. Lee, and J.-H. Lee "Study on Source/Drain Metal Contact Characteristics in a Poly-Si Reconfigurable Field Effect Transistor" The 25th Korean Conference on Semiconductors (KCS), 2018-02
  • 12 J.-H. Eum, J.-H. Bae, and J.-H. Lee "Study on Source/Drain Metal Contact Characteristics in a Poly-Si Reconfigurable Field Effect Transistor" The 25th Korean Conference on Semiconductors (KCS), 2018-02
  • 11 J.-H. Bae, J.-M. Park, J.-H. Eum, W.-M. Kang, J. Kim, B.-G. Park, and J.-H. Lee "Reconfigurable device with programmable bottom gate array" The 24th Korean Conference on Semiconductors (KCS), 2017-02
  • 10 S. Lim, J.-H. Bae, J.-M. Park, J.-H. Eum, W.-M. Kang, C.-H. Kim, M.-S. Lee, S. Y. Woo, B.-G. Park, and J.-H. Lee "Synaptic devices based on reconfigurable gated schottky diodes for highly-linear potentiation" The 24th Korean Conference on Semiconductors (KCS), 2017-02
  • 9 J.-H. Eum, J.-M. Park, J.-H. Bae, W.-M. Kang, and J.-H. Lee "Study on source/drain metal contact in a poly-Si reconfigurable field effect transistor having double-gate structure" 2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), 2016-07
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