204H. Bae, H. Choi, S. Oh, D. H. Kim, J. Bae, J. Kim, Y. H. Kim, and D. M. Kim"Extraction Technique for Intrinsic Subgap DOS in a-IGZO TFTs by De-Embedding the Parasitic Capacitance Through the Photonic C-V Measurement"IEEE Electron Device Letters, vol. 34, no. 1, pp. 57-59, 2013-01
203S. C. Baek, H. Bae, D. H. Kim, and D. M. Kim"Avalanche Hot Source Method for Separated Extraction of Parasitic Source and Drain Resistance in Single Metal-Oxide-Semiconductor Field Effect Transistors"Journal of Semiconductor Technology and Science, vol. 12, no. 1, pp. 46-52, 2012-03
202H.-S Kim, J. S. Park, H.-K. Jeong, K. S. Son, T. S. Kim, J.-B. Seon, E. Lee, J. G. Chung, D. H. Kim, M. Ryu, and S. Y. Lee"Density of States-Based Design of Metal Oxide Thin-Film Transistors for High Mobility and Superior Photostability"ACS Appl. Mater. Interfaces, vol. 4, no. 10, pp. 5416-5421, 2012-09
201J. Lee, J.-M. Lee, J. H. Lee, W. H. Lee, M. Uhum, B.-G. Park, D. M. Kim, Y.-J. Jeong, and D. H. Kim"Complementary Silicon Nanowire Hydrogen Ion Sensor With High Sensitivity and Voltage Output"IEEE Electron Device Letters, vol. 33, no. 12, pp. 1768-1770, 2012-12
200Y. Kim, S. Kim, W. Kim, M. Bae, H. K. Jeong, D. Kong, S. Choi, D. M. Kim and D. H. Kim"Amorphous InGaZnO Thin-Film Transistors-Part II Modeling and Simulation of Negative Bias Illumination Stress-Induced Instability"IEEE Transactions on Electron Devices, vol. 59, no. 10, pp. 2699-2706, 2012-10
199Y. Kim, M. Bae, W. Kim, D. Kong, H. K. Jeong, H. Kim, S. Choi, D. M. Kim and D. H. Kim"Amorphous InGaZnO Thin-Film Transistors-Part I: Complete Extraction of Density of States Over the Full Subband-Gap Energy Range"IEEE Transactions on Electron Devices, vol. 59, no. 10, pp. 2689-2698, 2012-10
198E. Hong, D. Yun, H. Bae, H. Choi, W. H. Lee, M. Uhm, H. Seo, J. Lee, J. Jang, D. H. Kim, and D. M. Kim"Subbandgap Optical Differential Body-Factor Technique and Characterization of Interface States in SOI MOSFETs"IEEE Electron Device Letters, vol. 33, no. 7, pp. 922-924, 2012-07
197H.-H. Nahm, Y.-S. Kim, and D. H. Kim"Instability of amorphous oxide semiconductors via carrier-mediated structural transition between disorder and peroxide state"Phys. Status Solid, vol 249, no. 6, pp. 1277-1281, 2012-02
196I.-T. Cho, I.-J. Park, D. Kong, D. H. Kim, J.-H. Lee, S.-H. Song, and H.-I. Kwon"Extraction of the Channel Mobility in InGaZnO TFTs Using Multifrequency Capacitance-Voltage Method"IEEE Electron Device Letters, vol. 33, no. 6, pp. 815-817, 2012-06
195S. Y. Lee, D. H. Kim, B. Kim, H. K. Jung, and D. H. Kim"Comparative analysis of temperature thermally induced instability between Si–In–Zn–O and Ga–In–Zn–O thin film transistors"Thin-Solid Films vol. 520, vol. 520, no. 10, pp. 3796-3799, 2012-03
194H. Bae, S. Jun, C. Jo, H. Choi, J. Lee, Y. H. Kim, S. Hwang, H. K. Jeong, I. Hur, W. Kim, D. Yun, E. Hong, H. Seo, D. H. Kim, and D. M. Kim"Modified Conductance Method for Extraction of Subgap Density-of-States in a-IGZO Thin-Film Transistors"IEEE Electron Device Letters, vol. 33, no. 8, pp.. 1138-1140, 2012-08
193I.-Y. Chung, H. Jang, J. Lee, H. Moon, S. M. Seo, and D. H. Kim"Simulation study on discrete charge effects of SiNW biosensors according to bound target position using a 3D TCAD simulator"IOP Science Nanotechnology, vol. 23, p. 065202, 2012-01
192H. Bae, I. Hur, J. S. Shin, D. Yun, E. Hong, K.-D. Jung, M.-S. Park, S. Choi, W. H. Lee, M. Uhm, D. H. Kim, and D. M. Kim"Hybrid C-V and I-V Technique for Separate Extraction of Structure- and Bias-Dependent Parasitic Resistances in a-InGaZnO TFTs"IEEE Electron Device Letters, vol. 33, no 4, 2012-04
191J. Jang, J. Kim, M. Bae, J. Lee, D. M. Kim, and D. H. Kim"Extraction of the sub-bandgap density-of-states in polymer thin-film transistor with the multi-frequency capacitance-voltage spectroscopy"Appl. Phys. Letters, vol. 100, issue. 13, p. 133506, 2012-03
190M. Bae, D. Yun, Y. Kim, D. Kong, H. K. Jeong, W. Kim, J. Kim, I. Hur, D. H. Kim, and D. M. Kim"Differential Ideality Factor Technique for Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors"IEEE Electron Device Letters, vol.33, no. 3, pp. 339-401, 2012-03
189J. S. Shin H. Choi, H. Bae, J. Jang, D. Yun, E. Hong, D. H. Kim, and D. M. Kim"Vertical Gate Si/SiGe Double HBT-based Capacitorless 1T DRAM Cell for Extended Retention time at Low Latch Voltage"IEEE Electron Device Letters, vol.33, no. 2, pp. 134-136, 2012-02
188S. Kim, Y. W. Jeon, Y. Kim, D. Kong, H. K. Jung, M. Bae, J.-H. Lee, B. D. Ahn, S. Y. Park, J.-H. Park, J. Park, H.-I. Kwon, D. M. Kim, and D. H. Kim"Impact of Oxygen Flow Rate on the Instability under Positive Bias-Stresses in DC Sputtered Amorphous InGaZnO Thin-Film Transistors"IEEE Electron Device Letters, vol. 33, no. 1,pp. 62-64, 2012-01
187J.-K. Lee, J.-W. Lee, J.-H. Bae, J. Park, S.-W Chung, J. S. Roh, S.-J. Hong, and J.-H. Lee"Phenomenological Analysis of Random Telegraph Noise in Amorphous TiOx-Based Bipolar Resistive Switching Random Access Memory Devices"Journal of Nanoscience and Nanotechnology, vol. 12, no. 7, pp.5392-5396, doi: 10.1166/jnn.2012.6249, 2012-07
186D. H. Kim, Y. W. Jeon, S. Kim, Y. Kim, Y. S. Yu, D. M. Kim, and H.-I. Kwon"Physical Parameter-Based SPICE Models for InGaZnO Thin Film Transistors Applicable to Process Optimization and Robust Circuit Design"IEEE Electron Device Letters, vol. 33, no. 1, pp. 59-61, 2012-01
185J. Jang, J. C. Park, D. Kong, D. M. Kim, J.-S. Lee, B.-H Sohn, I. H. Cho, and D. H. Kim"Endurance Characteristics of Amorphous-InGaZnO Transparent Flash Memory With Gold Nanocrystal Storage Layer"IEEE Trans. Electron Devices, vol. 58, no. 11, pp. 3940-3947, 2011-11