Journal papers

Home > Publications > Journal papers

  • 202 H.-S Kim, J. S. Park, H.-K. Jeong, K. S. Son, T. S. Kim, J.-B. Seon, E. Lee, J. G. Chung, D. H. Kim, M. Ryu, and S. Y. Lee "Density of States-Based Design of Metal Oxide Thin-Film Transistors for High Mobility and Superior Photostability" ACS Appl. Mater. Interfaces, vol. 4, no. 10, pp. 5416-5421, 2012-09
  • 201 J. Lee, J.-M. Lee, J. H. Lee, W. H. Lee, M. Uhum, B.-G. Park, D. M. Kim, Y.-J. Jeong, and D. H. Kim "Complementary Silicon Nanowire Hydrogen Ion Sensor With High Sensitivity and Voltage Output" IEEE Electron Device Letters, vol. 33, no. 12, pp. 1768-1770, 2012-12
  • 200 Y. Kim, S. Kim, W. Kim, M. Bae, H. K. Jeong, D. Kong, S. Choi, D. M. Kim and D. H. Kim "Amorphous InGaZnO Thin-Film Transistors-Part II Modeling and Simulation of Negative Bias Illumination Stress-Induced Instability" IEEE Transactions on Electron Devices, vol. 59, no. 10, pp. 2699-2706, 2012-10
  • 199 Y. Kim, M. Bae, W. Kim, D. Kong, H. K. Jeong, H. Kim, S. Choi, D. M. Kim and D. H. Kim "Amorphous InGaZnO Thin-Film Transistors-Part I: Complete Extraction of Density of States Over the Full Subband-Gap Energy Range" IEEE Transactions on Electron Devices, vol. 59, no. 10, pp. 2689-2698, 2012-10
  • 198 E. Hong, D. Yun, H. Bae, H. Choi, W. H. Lee, M. Uhm, H. Seo, J. Lee, J. Jang, D. H. Kim, and D. M. Kim "Subbandgap Optical Differential Body-Factor Technique and Characterization of Interface States in SOI MOSFETs" IEEE Electron Device Letters, vol. 33, no. 7, pp. 922-924, 2012-07
  • 197 H.-H. Nahm, Y.-S. Kim, and D. H. Kim "Instability of amorphous oxide semiconductors via carrier-mediated structural transition between disorder and peroxide state" Phys. Status Solid, vol 249, no. 6, pp. 1277-1281, 2012-02
  • 196 I.-T. Cho, I.-J. Park, D. Kong, D. H. Kim, J.-H. Lee, S.-H. Song, and H.-I. Kwon "Extraction of the Channel Mobility in InGaZnO TFTs Using Multifrequency Capacitance-Voltage Method" IEEE Electron Device Letters, vol. 33, no. 6, pp. 815-817, 2012-06
  • 195 S. Y. Lee, D. H. Kim, B. Kim, H. K. Jung, and D. H. Kim "Comparative analysis of temperature thermally induced instability between Si–In–Zn–O and Ga–In–Zn–O thin film transistors" Thin-Solid Films vol. 520, vol. 520, no. 10, pp. 3796-3799, 2012-03
  • 194 H. Bae, S. Jun, C. Jo, H. Choi, J. Lee, Y. H. Kim, S. Hwang, H. K. Jeong, I. Hur, W. Kim, D. Yun, E. Hong, H. Seo, D. H. Kim, and D. M. Kim "Modified Conductance Method for Extraction of Subgap Density-of-States in a-IGZO Thin-Film Transistors" IEEE Electron Device Letters, vol. 33, no. 8, pp.. 1138-1140, 2012-08
  • 193 I.-Y. Chung, H. Jang, J. Lee, H. Moon, S. M. Seo, and D. H. Kim "Simulation study on discrete charge effects of SiNW biosensors according to bound target position using a 3D TCAD simulator" IOP Science Nanotechnology, vol. 23, p. 065202, 2012-01
  • 192 H. Bae, I. Hur, J. S. Shin, D. Yun, E. Hong, K.-D. Jung, M.-S. Park, S. Choi, W. H. Lee, M. Uhm, D. H. Kim, and D. M. Kim "Hybrid C-V and I-V Technique for Separate Extraction of Structure- and Bias-Dependent Parasitic Resistances in a-InGaZnO TFTs" IEEE Electron Device Letters, vol. 33, no 4, 2012-04
  • 191 J. Jang, J. Kim, M. Bae, J. Lee, D. M. Kim, and D. H. Kim "Extraction of the sub-bandgap density-of-states in polymer thin-film transistor with the multi-frequency capacitance-voltage spectroscopy" Appl. Phys. Letters, vol. 100, issue. 13, p. 133506, 2012-03
  • 190 M. Bae, D. Yun, Y. Kim, D. Kong, H. K. Jeong, W. Kim, J. Kim, I. Hur, D. H. Kim, and D. M. Kim "Differential Ideality Factor Technique for Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors" IEEE Electron Device Letters, vol.33, no. 3, pp. 339-401, 2012-03
  • 189 J. S. Shin H. Choi, H. Bae, J. Jang, D. Yun, E. Hong, D. H. Kim, and D. M. Kim "Vertical Gate Si/SiGe Double HBT-based Capacitorless 1T DRAM Cell for Extended Retention time at Low Latch Voltage" IEEE Electron Device Letters, vol.33, no. 2, pp. 134-136, 2012-02
  • 188 S. Kim, Y. W. Jeon, Y. Kim, D. Kong, H. K. Jung, M. Bae, J.-H. Lee, B. D. Ahn, S. Y. Park, J.-H. Park, J. Park, H.-I. Kwon, D. M. Kim, and D. H. Kim "Impact of Oxygen Flow Rate on the Instability under Positive Bias-Stresses in DC Sputtered Amorphous InGaZnO Thin-Film Transistors" IEEE Electron Device Letters, vol. 33, no. 1,pp. 62-64, 2012-01
  • 187 J.-K. Lee, J.-W. Lee, J.-H. Bae, J. Park, S.-W Chung, J. S. Roh, S.-J. Hong, and J.-H. Lee "Phenomenological Analysis of Random Telegraph Noise in Amorphous TiOx-Based Bipolar Resistive Switching Random Access Memory Devices" Journal of Nanoscience and Nanotechnology, vol. 12, no. 7, pp.5392-5396, doi: 10.1166/jnn.2012.6249, 2012-07
  • 186 D. H. Kim, Y. W. Jeon, S. Kim, Y. Kim, Y. S. Yu, D. M. Kim, and H.-I. Kwon "Physical Parameter-Based SPICE Models for InGaZnO Thin Film Transistors Applicable to Process Optimization and Robust Circuit Design" IEEE Electron Device Letters, vol. 33, no. 1, pp. 59-61, 2012-01
  • 185 J. Jang, J. C. Park, D. Kong, D. M. Kim, J.-S. Lee, B.-H Sohn, I. H. Cho, and D. H. Kim "Endurance Characteristics of Amorphous-InGaZnO Transparent Flash Memory With Gold Nanocrystal Storage Layer" IEEE Trans. Electron Devices, vol. 58, no. 11, pp. 3940-3947, 2011-11
  • 184 D. H. Kim, D. Y. Yoo, H. K. Jung, D. H. Kim, and S. Y. Lee "Origin of instability by positive bias stress in amorphous Si-In-Zn-O thin film transistor" Appl. Phys. Lett., vol. 99, pp. 172106, 2011-10
  • 183 D. H. Kim, H. K. Jung, D. H. Kim, and S. Y. Lee "Effect of interface states on the instability under temperature stress in amorphous SiInZnO thin film transistor" Appl. Phys. Lett., vol. 99, pp. 162101, 2011-10
Prev12345678910Next>>
개인정보 처리방침