Journal papers
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- 44 "An Optically Assisted Program Method for Capacitorless 1T‐DRAM" IEEE Electron Device Letters, vol. 57 no. 7 pp. 1714–1718, 2010-07
- 43 "Nanoscale-Wire Patterning Using Side-Wall and Quantum Dot Memory Device Fabrication" Journal of the Korean Physical Society, vol. 40, no. 1, pp. 128~131, 2002-01
- 42 "Characteristics of Silicon-On-Insulator Single-Electron Transistors with Electrically Induced Tunnel Barriers" Journal of the Korean Physical Society, vol. 40, no. 1, pp. 140~144, 2002-01
- 41 "The Characteristics of Seebeck Coefficient in Silicon Nanowires Manufactured by CMOS Compatible Process" Nanoscale Research Letters, vol. 5 pp. 1654– 1657 2010, 2010-07
- 40 "Characterization of Interface States in MOS Systems using Photonic High-Frequency Capacitance-Voltage Responses" J. of the Korean Phys. Soc., vol. 41, no. 6, pp. 892-895, 2002-12
- 39 "Analysis and Evaluation of a BJT‐Based 1T‐DRAM" IEEE Electron Device Letters, vol. 31 no. 5 pp. 393–395, 2010-05
- 38 "Comprehensive Characterization and Modeling of Abnormal Gate Leakage Current in Pseudomorphic HEMTs" J. of the Korean Phys. Soc., vol. 40, no. 4, pp. 577-583, 2002-04
- 37 "Highly durable and flexible memory based on resistance switching" Solid‐State Electronics, vol. 54 pp. 392–396, 2010-04
- 36 "High‐Performance Polycrystalline Silicon TFT on the Structure of a Dopant‐Segregated Schottky‐Barrier Source/Drain" IEEE Electron Device Letters, vol. 31 no. 3 pp. 228–230, 2010-03
- 35 "Photonic High-Frequency Capacitance-Voltage Characterization of Interface States in Metal-Oxide-Semiconductor Capacitors" IEEE Trans. Electron Devices, vol. 49, no. 3, pp. 526-528, 2002-03
- 34 "Photonic Characterization of Capacitance-Voltage Characteristics in MOS Capacitors and Current-Voltage Characteristics in MOSFETs" J. of the Korean Phys. Soc., vol. 40, no. 1, pp. 64-67, 2002-01
- 33 "A study of the memory effects of metallic core‐metal oxide shell nanocrystals by a micelle dipping technique" Nanotechnology, vol. 21 no. 12 pp. 125202, 2010-03
- 32 "Extraction of Device Model Parameters in MOSFETs Combining C-V and I-V Characteristics" J. of the Korean Phys. Soc., vol. 40, no. 1, pp. 60-63, 2002-01
- 31 "Fin Width (Wfin) Dependence of Programming Characteristics on a Dopant‐Segregated Schottky‐Barrier (DSSB) FinFET SONOS Device for a NOR‐Type Flash Memory Device" IEEE Electron Device Letters, vol. 31 no. 1 pp. 2009–2011, 2010-01
- 30 "An underlap field‐effect transistor for electrical detection of influenza" Applied Physics Letters, vol. 96 no. 3 pp. 033703, 2010-01
- 29 "Single-electron transistor based on silicon-on-insulator quantum wire fabricated by a side-wall patterning method" Appl. Phys. Lett., vol. 79, no. 23, pp. 3812~3814, 2001-12
- 28 "Room Temperature Coulomb Oscillation of a Single Electron Switch with an Ectrically Formed Quantum Dot and Its Modeling" Jpn. J. Appl. Phys., vol. 39, pp. 2329~2333, 2000-04
- 27 "Improvement of the Sensing Window on a Capacitorless 1T‐DRAM of a FinFET‐Based Unified RAM" IEEE Transactions on Electron Devices, vol. 56 no. 12 pp. 3228–3231, 2009-12
- 26 "Resistive‐Memory Embedded Unified RAM (R‐URAM)" IEEE Transactions on Electron Devices, vol. 56 no. 11 pp. 2670–2674, 2009-11
- 25 "High spatial density nanocrystal formation using thin layer of amorphous Si0.7Ge0.3 deposited on SiO2" J. of Applied Physics., vol. 87, no. 5, pp2449~2453, 2000-03
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