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  • 24 S.‐J. Choi, J.‐W. Han, M. Jang, and Y.‐K. Choi "Analysis of Trapped Charges in Dopant‐Segregated Schottky Barrier‐Embedded FinFET SONOS Devices" IEEE Electron Device Letters, vol. 30 no. 10 pp. 1084–1086, 2009-10
  • 23 K. H. Baek, G. M. Lim, S. D. Cho, Y. C. Kim, H. C. Kim, S. K. Kim, and D. M. Kim "Modeling of Submicron Si-MOSFET's for Microwave Applications with Unique Extraction of Small-Signal Characteristic Parameters" J. of the Korean Phys. Soc., vol. 36, no. 6, pp. 915-922, 2000-12
  • 22 S.‐J. Choi, J.‐W. Han, M. Jang, C.‐J. Choi, and Y.‐K. Choi "Characterization of current injection mechanism in Schottky‐barrier metal‐oxide‐semiconductor field‐effect transistors" Applied Physics Letters, vol. 95 pp. 083502, 2009-08
  • 21 G. M. Lim, Y. C. Kim, D. J. Kim, Y. W. Park, and D. M. Kim "Additional Resistance Method for Extraction of Separated Nonlinear Parasitic Resistances and Effective Mobility in MOSFETs" Electronics Lett., vol. 36, no. 14, pp. 1233-1234, 2000-07
  • 20 S. Kim, S.‐J. Choi, M. Jang, and Y.‐K. Choi "Investigation of the source‐side injection characteristic of a dopant‐segregated Schottky barrier metal‐oxide‐semiconductor field‐effect‐transistor" Applied Physics Letters, vol. 95 no. 6 pp. 063508, 2009-08
  • 19 D. M. Kim, H. J. Kim, J. I. Lee, and Y. J. Lee "Comparison of Photoresponsive Drain Conduction and Gate Leakage in N-channel Pseudomorphic HEMT and MESFET under Electro-Optical Stimulations" IEEE Electron Device Lett., vol. 21, no. 6, pp. 264-267, 2000-06
  • 18 D. M. Kim, S. H. Song, K. H. Baek, D. J. Kim, and H. J. Kim "Microwave Characteristics of a Pseudomorphic High Electron Mobility Transistor under Electro-Optical Stimulations" IEEE Electron Device Lett., vol. 21, no. 3, pp. 93-96, 2000-03
  • 17 J.‐W. Han, S.‐W. Ryu, D.‐H. Kim, C.‐J. Kim, S. Kim, D.‐I. Moon, S.‐J. Choi, and Y.‐K. Choi "Fully Depleted Polysilicon TFTs for Capacitorless 1T‐DRAM" IEEE Electron Device Letters, vol. 30 no. 7 pp. 742–744, 2009-07
  • 16 J.‐W. Han, C.‐J. Kim, S.‐J. Choi, D.‐H. Kim, D.‐I. Moon, and Y.‐K. Choi "Gate‐to‐Source/Drain Nonoverlap Device for Soft‐Program Immune Unified RAM (URAM)" IEEE Electron Device Letters, vol. 30 no. 5 pp. 544– 546, 2009-05
  • 15 D. M. Kim, G. -M. Lim, and H. J. Kim "Parallel Conduction and Non-Linear Optoelectronic Response of an N-Channel Pseudomorphic High Electron Mobility Transistor" Solid-State Electronics, vol. 43, no. 5, pp. 943-951, 1999-01
  • 14 J.‐W. Han, S.‐W. Ryu, C.‐J. Kim, S.‐J. Choi, S. Kim, J.‐H. Ahn, D.‐H. Kim, K. J. Choi, B. J. Choi, J. S. Kim, K. H. Kim, G. S. Lee, J. S. Oh, M. H. Song, Y. C. Park, J. W. Kim, and Y.‐K. Choi "Energy‐Band‐Engineered Unified‐RAM (URAM) Cell on Buried Si1‐yCy Substrate for Multifunctioning Flash Memory and 1T‐DRAM" IEEE Transactions on Electron Devices, vol. 56 no. 4 pp. 641–647, 2009-04
  • 13 D. M. Kim, S. H. Song, H. J. Kim, and K. N. Kang "Electrical Characteristics of an Optically Controlled N-Channel AlGaAs/GaAs/InGaAs Pseudomorphic HEMT" IEEE Electron Device Lett., vol. 20, no. 2, pp. 73-76, 1999-02
  • 12 D. H. Chae, D. H. Kim, Y. J. Lee, C. H. Kwak, J. D. Lee, B. G. Park, T. S. Yoon, J. Y. Kwon, K. B. Kim, K. R. Kim, N. J. Park, H. S. Yoon and S. J. Jeong "Nanocrystal Memory Cell Using High-Density Si 0.73Ge 0.27 Quantum Dot Array" J. Korean Physical Society, vol. 35, pp. s995~s998, 1999-12
  • 11 S.‐W. Ryu, J.‐W. Han, C.‐J. Kim, S.‐J. Choi, S. Kim, J. S. Kim, K. H. Kim, J. S. Oh, M. H. Song, G. S. Lee, Y. C. Park, J. W. Kim, and Y.‐K. Choi "Refinement of Unified Random Access Memory" IEEE Transactions on Electron Devices, vol. 56 no. 4 pp. 601–608, 2009-04
  • 10 S.‐J. Choi, J.‐W. Han, M. Jang, J. S. Kim, K. H. Kim, G. S. Lee, J. S. Oh, M. H. Song, Y. C. Park, J. W. Kim, and Y.‐K. Choi "High Injection Efficiency and Low‐Voltage Programming in a Dopant‐Segregated Schottky Barrier (DSSB) FinFET SONOS for NOR‐Type Flash Memory" IEEE Electron Device Letters, vol. 30 no. 3 pp. 265–268, 2009-03
  • 9 D. H. Kim, D. H. Chae, J. D. Lee, B. G. Park, and H.-G. Lee "Silicon Single Electron Transistors with a Dual Gate Structure" J. Korean Physical Society, vol. 33, pp. s278-s282, 1998-11
  • 8 J.‐W. Han, S.‐W. Ryu, S.‐J. Choi, and Y.‐K. Choi "Gate‐Induced Drain‐Leakage (GIDL) Programming Method for Soft‐Programming‐Free Operation in Unified RAM (URAM)" IEEE Electron Device Letters, vol. 30 no. 2 pp. 189–191, 2009-02
  • 7 H. J. Kim, D. M. Kim, S. H. Kim, J. I. Lee, K. N. Kang, and K. Cho "Effects of Light on the InGaP/GaAs/ InGaAs P-Channel Double Heterojunction Pseudomorphic MODFET" Japan. J. of App. Phys., vol. 37, no.3b (part 2), pp. l322-l324, 1998-03
  • 6 J. Jo, Y. I. Choi, D. M. Kim, K. Alt, and K. L. Wang "Observation of Resonances by Individual Energy Levels in InGaAs/AlAs Triple Barrier Resonant Tunneling Diodes" Japan. J. of Appl. Phys., vol. 37, no. 3b (part 1), pp. 1654-1656, 1998-03
  • 5 S.‐J. Choi, J.‐W. Han, S. Kim, M. Jang, J. S. Kim, K. H. Kim, G. S. Lee, J. S. Oh, M. H. Song, Y. C. Park, J. W. Kim, and Y.‐K. Choi "Enhancement of Program Speed in Dopant‐Segregated Schottky‐Barrier (DSSB) FinFET SONOS for NAND‐Type Flash Memory" IEEE Electron Device Letters, vol. 30 no. 1 pp. 78–81, 2009-01
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