Journal papers

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  • 324 S. Hong, J. Shin, Y. Hong, M. Wu, Y. Jeong, D. Jang, G. Jung, J.-H. Bae, and J.-H. Lee "Humidity-Sensitive Field Effect Transistor with In2O3 Nanoparticles as a Sensing Layer" Journal of nanoscience and nanotechnology, vol. 19, no. 10, pp. 6656-6662, doi: 10.1166/jnn.2019.17092, 2019-10
  • 323 Y. Lee, B. Choi, J. Yoon, Y. Kim, J. Park, H-.J. Kim, D. H. Kim, D. M. Kim, S. Kim*, and S.-J. Choi*(*co-corresponding authors) "Highly transparent tactile sensor based on a percolated carbon nanotube network" AIP Advances, vol. 8, p. 065109, DOI:10.1063/1.5036530, 2018-06
  • 322 J.-H. Bae, J.-W. Back, M.-W. Kwon, J. H. Seo, K. Yoo, S. Y. Woo, K. Park, B.-G. Park, and J.-H. Lee "Characterization of a Capacitorless DRAM Cell for Cryogenic Memory Applications" IEEE Electron Device Letters, vol. 40, no. 10, pp. 1614-1617, doi: 10.1109/LED.2019.2933504, 2019-08
  • 321 J. Yoon†, J. Han†, B. Choi, Y. Lee, Y. Kim, J. Park, M. Lim, M.-H. Kang, D. H. Kim, D. M. Kim, S. Kim*, S.-J. Choi* "A Three-Dimensional Printed Poly(vinyl alcohol) Substrate with Controlled On-Demand Degradation for Transient Electronics" ACS Nano, DOI: 10.1021/acsnano.8b02244, 2018-05
  • 320 S. Y. Woo, K.-B. Choi, S. Lim, S.-T. Lee, C.-H. Kim, W.-M. Kang, D. Kwon, J.-H. Bae, B.-G. Park, and J.-H. Lee "Synaptic device using a floating fin-body MOSFET with memory functionality for neural network" Solid-State Electronics, vol. 156, pp. 23-27, doi: 10.1016/j.sse.2019.02.011, 2019-06
  • 319 J. Yoon†, H. Jung†, J. T. Jang, J. Lee, Y. Lee, M. Lim, D. M. Kim, D. H. Kim*, S.-J. Choi* (†These authors equally contributed to this work, *co-corresponding authors) "Hybrid complementary inverter based on carbon nanotube and IGZO thin-film transistors with controlled process conditions" Journal of Alloys and Compounds, DOI: 10.1016/j.jallcom.2018.05.188, 2018-05
  • 318 S. Lim, D. Kwon, J.-H. Eum, S.-T. Lee, J.-H. Bae, H. Kim, C.-H. Kim, B.-G. Park, and J.-H. Lee "Highly Reliable Inference System of Neural Networks Using Gated Schottky Diodes" IEEE Journal of the Electron Device Society, vol. 7, pp. 522-528, doi: 10.1109/JEDS.2019.2913146, 2019-04
  • 317 Y. Lee†, J. Han†, B. Choi, J. Yoon, J. Park, Y. Kim, J. Lee, D. H. Kim, D. M. Kim, M. Lim, M.-H. Kang, S. Kim*, S.-J. Choi* (†These authors equally contributed to this work) "Three-Dimensionally Printed Micro-electromechanical Switches" ACS Applied Materials & Interfaces, DOI: 10.1021/acsami.8b01455, 2018-04
  • 316 N. Choi, H.-J. Kang, J.-H. Bae, B.-G. Park, and J.-H. Lee "Effect of Nitrogen Content in Tunneling Dielectric on Cell Properties of 3-D NAND Flash Cells" IEEE Electron Device Letters, vol. 40, no. 5, pp. 702-705, doi: 10.1109/LED.2019.2905299, 2019-03
  • 315 J. Kim, H. Yoo, H. Lee, S. K. Kim, S. Choi, S.-J. Choi, D. H. Kim, D. M. Kim "Comprehensive separate extraction of parasitic resistances in MOSFETs considering the gate bias-dependence and the asymmetric overlap length" Microelectronics Reliability, DOI: 10.1016/j.microrel.2018.04.011, 2018-04
  • 314 J.-H. Bae, H. Kim, D. Kwon, S. Lim, S.-T. Lee, B.-G. Park, and J.-H. Lee "Reconfigurable Field-Effect-Transistor as a Synaptic Device for XNOR Binary Neural Network" IEEE Electron Device Letters, vol. 40, no. 4, pp. 624-627, doi: 10.1109/LED.2019.2898448, 2019-04
  • 313 M. J. Lee, S. Lee, S. Lee, K. Balamurugan, C. Yoon, J. T. Jang, S.-H. Kim, D.-H. Kwon, M. Kim, J.-P. Ahn, D. H. Kim, J.-G. Park, B. H. Park "Synaptic devices containing two-dimensional layered single-crystal chromium thiophosphate (CrPS4)" NPG Asia Materials, DOI:10.1038/s41427-018-0016-7, 2018-04
  • 312 S. K. Kim, J.-P. Shim, D.-M. Guem, J. Kim, C. Z. Kim, H.-S. Kim, J. D. Song, S.-J. Choi, D. H. Kim, W. J. Choi, H.-J. Kim, D. M. Kim, S. Kim "Impact of Ground Plane Doping and Bottom-Gate Biasing on Electrical Properties in In0.53Ga0.47As-OI MOSFETs and Donor Wafer Reusability Toward Monolithic 3-D Integration With In0.53Ga0.47As Channel" IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 65, no. 5, pp. 1862-1868, DOI: 10.1109/TED.2018.2810304, 2018-03
  • 311 C.-H. Kim, S. Lim, S. Y. Woo, W.-M. Kang, Y.-T. Seo, S. T. Lee, S. Lee, D. Kwon, S. Oh, Y. Noh, H. Kim, J. Kim, J.-H. Bae, and J.-H. Lee "Emerging memory technologies for neuromorphic computing" Nanotechnology, vol. 30, no. 3, p. 032001, doi: 10.1088/1361-6528/aae975, 2018-11
  • 310 J. T. Jang, S.-J. Choi, D. M. Kim, D. H. Kim "The Calculation of Negative Bias Illumination Stress-Induced Instability of Amorphous InGaZnO Thin-Film Transistors for Instability-Aware Design" IEEE Transactions on Electron Devices, vol. 65, no. 3, pp. 1002-1008, DOI: 10.1109/TED.2018.2797208, 2018-03
  • 309 K.-B. Choi, S.-Y. Woo, W.-M. Kang, S. Lee, C.-H. Kim, J.-H. Bae, and J.-H. Lee "A Split-Gate Positive Feedback Device with an Integrate-and-Fire Capability for a High-Density Low-Power Neuron Circuit" Frontiers in Neuroscience, vol. 12, no. 704, pp. 1-13, doi: 10.3389/fnins.2018.00704, 2018-10
  • 308 J. Jang†, S. Choi†, J. Kim, T. J. Park, B.-G. Park, D. M. Kim, S.-J. Choi, S. M. Lee, D. H. Kim, H.-S. Mo (†These authors equally contributed to this work) "Effect of liquid gate bias rising time in pH sensors based on Si nanowire ion sensitive field effect transistors" Solid State Electronics, vol. 140, pp. 109-114, DOI: 10.1016/j.sse.2017.10.027, 2018-02
  • 307 S. Hong, J. Shin, Y. Hong, M. Wu, D. Jang, Y. Jeong, G. Jung, J.-H. Bae, H. W. Jang and J.-H. Lee "Observation of physisorption in a high-performance FET-type oxygen gas sensor operating at room temperature" Nanoscale, vol. 10, no. 37, pp. 18019-18027, doi: 10.1039/C8NR04472D, 2018-09
  • 306 J. T. Jang, D. Ko, G. Ahn, H. R. Yu, H. Jung, Y. S. Kim, C. Yoon S. Lee, B. H. Park, S.-J. Choi, D. M. Kim, D. H. Kim "Effect of oxygen content of the LaAlO3 layer on the synaptic behavior of Pt/LaAlO3/Nb-doped SrTiO3 memristors for neuromorphic applications" Solid State Electronics, vol. 140, pp. 139-143, DOI: 10.1016/j.sse.2017.10.032, 2018-02
  • 305 C.-H. Kim, S. Lee, S. Y. Woo, W.-M. Kang, S. Lim, J.-H. Bae, J. Kim and J.-H. Lee "Demonstration of Unsupervised Learning with Spike-Timing-Dependent Plasticity using a TFT type NOR Flash Memory Array" IEEE Transactions on Electron Devices, vol. 65, no. 5, pp. 1774-1780, doi: 10.1109/TED.2018.2817266, 2018-05