Journal papers

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  • 328 S.-T. Lee, S. Lim, N. Choi, J.-H. Bae, D. Kwon, B.-G. Park, and J.-H. Lee "Operation Scheme of Multi-Layer Neural Networks Using NAND Flash Memory as High-Density Synaptic Devices" IEEE Journal of the Electron Device Society, vol. 7, pp. 1085-1093, doi: 10.1109/JEDS.2019.2947316, 2019-10
  • 327 H. R. Yu, J. T. Jang, D. Ko, S. Choi, G. Ahn, S.-J. Choi, D. M. Kim, and D. H. Kim* "Degradation on the Current Saturation of Output Characteristics in Amorphous InGaZnO Thin-Film Transistors" IEEE Transactions on Electron Devices, vol. 65, no. 8, DOI: 1109/TED.2018.2844862, 2018-08
  • 326 J.-H. Bae, S. Lim, D. Kwon, S.-T. Lee, H. Kim, and J.-H. Lee "Gated Schottky Diode-Type Synaptic Device with a Field-Plate Structure to Reduce the Forward Current" Journal of Nanoscience and Nanotechnology, vol.19, no. 10, pp. 6135-6138, doi: 10.1166/jnn.2019.17003, 2019-10
  • 325 S. Kim†, B. Choi†, M. Lim, Y. Kim, H.-D. Kim, S.-J. Choi* (†These authors equally contributed to this work) "Synaptic Device Network Architecture with Feature Extraction for Unsupervised Image Classification" Small, DOI: 10.1002/small. 201800521, 2018-07
  • 324 S. Hong, J. Shin, Y. Hong, M. Wu, Y. Jeong, D. Jang, G. Jung, J.-H. Bae, and J.-H. Lee "Humidity-Sensitive Field Effect Transistor with In2O3 Nanoparticles as a Sensing Layer" Journal of nanoscience and nanotechnology, vol. 19, no. 10, pp. 6656-6662, doi: 10.1166/jnn.2019.17092, 2019-10
  • 323 Y. Lee, B. Choi, J. Yoon, Y. Kim, J. Park, H-.J. Kim, D. H. Kim, D. M. Kim, S. Kim*, and S.-J. Choi*(*co-corresponding authors) "Highly transparent tactile sensor based on a percolated carbon nanotube network" AIP Advances, vol. 8, p. 065109, DOI:10.1063/1.5036530, 2018-06
  • 322 J.-H. Bae, J.-W. Back, M.-W. Kwon, J. H. Seo, K. Yoo, S. Y. Woo, K. Park, B.-G. Park, and J.-H. Lee "Characterization of a Capacitorless DRAM Cell for Cryogenic Memory Applications" IEEE Electron Device Letters, vol. 40, no. 10, pp. 1614-1617, doi: 10.1109/LED.2019.2933504, 2019-08
  • 321 J. Yoon†, J. Han†, B. Choi, Y. Lee, Y. Kim, J. Park, M. Lim, M.-H. Kang, D. H. Kim, D. M. Kim, S. Kim*, S.-J. Choi* "A Three-Dimensional Printed Poly(vinyl alcohol) Substrate with Controlled On-Demand Degradation for Transient Electronics" ACS Nano, DOI: 10.1021/acsnano.8b02244, 2018-05
  • 320 S. Y. Woo, K.-B. Choi, S. Lim, S.-T. Lee, C.-H. Kim, W.-M. Kang, D. Kwon, J.-H. Bae, B.-G. Park, and J.-H. Lee "Synaptic device using a floating fin-body MOSFET with memory functionality for neural network" Solid-State Electronics, vol. 156, pp. 23-27, doi: 10.1016/j.sse.2019.02.011, 2019-06
  • 319 J. Yoon†, H. Jung†, J. T. Jang, J. Lee, Y. Lee, M. Lim, D. M. Kim, D. H. Kim*, S.-J. Choi* (†These authors equally contributed to this work, *co-corresponding authors) "Hybrid complementary inverter based on carbon nanotube and IGZO thin-film transistors with controlled process conditions" Journal of Alloys and Compounds, DOI: 10.1016/j.jallcom.2018.05.188, 2018-05
  • 318 S. Lim, D. Kwon, J.-H. Eum, S.-T. Lee, J.-H. Bae, H. Kim, C.-H. Kim, B.-G. Park, and J.-H. Lee "Highly Reliable Inference System of Neural Networks Using Gated Schottky Diodes" IEEE Journal of the Electron Device Society, vol. 7, pp. 522-528, doi: 10.1109/JEDS.2019.2913146, 2019-04
  • 317 Y. Lee†, J. Han†, B. Choi, J. Yoon, J. Park, Y. Kim, J. Lee, D. H. Kim, D. M. Kim, M. Lim, M.-H. Kang, S. Kim*, S.-J. Choi* (†These authors equally contributed to this work) "Three-Dimensionally Printed Micro-electromechanical Switches" ACS Applied Materials & Interfaces, DOI: 10.1021/acsami.8b01455, 2018-04
  • 316 N. Choi, H.-J. Kang, J.-H. Bae, B.-G. Park, and J.-H. Lee "Effect of Nitrogen Content in Tunneling Dielectric on Cell Properties of 3-D NAND Flash Cells" IEEE Electron Device Letters, vol. 40, no. 5, pp. 702-705, doi: 10.1109/LED.2019.2905299, 2019-03
  • 315 J. Kim, H. Yoo, H. Lee, S. K. Kim, S. Choi, S.-J. Choi, D. H. Kim, D. M. Kim "Comprehensive separate extraction of parasitic resistances in MOSFETs considering the gate bias-dependence and the asymmetric overlap length" Microelectronics Reliability, DOI: 10.1016/j.microrel.2018.04.011, 2018-04
  • 314 J.-H. Bae, H. Kim, D. Kwon, S. Lim, S.-T. Lee, B.-G. Park, and J.-H. Lee "Reconfigurable Field-Effect-Transistor as a Synaptic Device for XNOR Binary Neural Network" IEEE Electron Device Letters, vol. 40, no. 4, pp. 624-627, doi: 10.1109/LED.2019.2898448, 2019-04
  • 313 M. J. Lee, S. Lee, S. Lee, K. Balamurugan, C. Yoon, J. T. Jang, S.-H. Kim, D.-H. Kwon, M. Kim, J.-P. Ahn, D. H. Kim, J.-G. Park, B. H. Park "Synaptic devices containing two-dimensional layered single-crystal chromium thiophosphate (CrPS4)" NPG Asia Materials, DOI:10.1038/s41427-018-0016-7, 2018-04
  • 312 S. K. Kim, J.-P. Shim, D.-M. Guem, J. Kim, C. Z. Kim, H.-S. Kim, J. D. Song, S.-J. Choi, D. H. Kim, W. J. Choi, H.-J. Kim, D. M. Kim, S. Kim "Impact of Ground Plane Doping and Bottom-Gate Biasing on Electrical Properties in In0.53Ga0.47As-OI MOSFETs and Donor Wafer Reusability Toward Monolithic 3-D Integration With In0.53Ga0.47As Channel" IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 65, no. 5, pp. 1862-1868, DOI: 10.1109/TED.2018.2810304, 2018-03
  • 311 C.-H. Kim, S. Lim, S. Y. Woo, W.-M. Kang, Y.-T. Seo, S. T. Lee, S. Lee, D. Kwon, S. Oh, Y. Noh, H. Kim, J. Kim, J.-H. Bae, and J.-H. Lee "Emerging memory technologies for neuromorphic computing" Nanotechnology, vol. 30, no. 3, p. 032001, doi: 10.1088/1361-6528/aae975, 2018-11
  • 310 J. T. Jang, S.-J. Choi, D. M. Kim, D. H. Kim "The Calculation of Negative Bias Illumination Stress-Induced Instability of Amorphous InGaZnO Thin-Film Transistors for Instability-Aware Design" IEEE Transactions on Electron Devices, vol. 65, no. 3, pp. 1002-1008, DOI: 10.1109/TED.2018.2797208, 2018-03
  • 309 K.-B. Choi, S.-Y. Woo, W.-M. Kang, S. Lee, C.-H. Kim, J.-H. Bae, and J.-H. Lee "A Split-Gate Positive Feedback Device with an Integrate-and-Fire Capability for a High-Density Low-Power Neuron Circuit" Frontiers in Neuroscience, vol. 12, no. 704, pp. 1-13, doi: 10.3389/fnins.2018.00704, 2018-10