Conference
Home > Publications > Conference
- 101 "Characterization of floating-base bipolar junction transistor as a 2-terminal select device for cross-point memory devices" The 19th Korean Conference on Semiconductors (KCS), 2012-02
- 100 "Analysis of hysteresis characteristics of fabricated SiNW biosensor in aqueous environment with reference electrode" Silicon Nanoelectronics Workshop (SNW), 2012 IEEE Digital Object Identifier, 2012-
- 99 "CMOS-Based Biosensors with an Independent Double‐Gate FinFET" IEEE International Electron Device Meeting (IEDM), 2011-12
- 98 "Multi‐Functional Universal Device using a Band‐Engineered Vertical Structure" IEEE International Electron Device Meeting (IEDM), 2011-12
- 97 "Terahertz Time Domain Spectroscopy of Vertical Silicon Nanowires" 36th International Conference on Infrared, Millimeter, and Terahertz Waves, 2011-10
- 96 "Scaling of the Pull‐In Voltage in a Novel CMOS‐compatible NEMS Switch" Solid State Devices and Materials (SSDM), 2011-09
- 95 "Analytical of current hysteresis of SiNW in the aqueous solution depending on measurement biases" 2011 11th IEEE NANO, 2011-08
- 94 "A Novel Junctionless All‐Around‐Gate SONOS Device with a Quantum Nanowire on a Bulk Substrate for 3D Stack NAND Flash Memory" Symposium on VLSI Technology Digest of Technical Papers (VLSI), pp. 74‐75, 2011-06
- 93 "Optical‐Charge Pumping: A Universal Trap Characterization Technique for Nanoscale Floating Body Devices" Symposium on VLSI Technology Digest of Technical Papers (VLSI), pp. 190‐191, 2011-06
- 92 "Extraction of 3-D trap position in NAND flash memory considering channel resistance of pass cells and bit-line interference" 2011 Symposium on VLSI Technology (VLSIT), 2011-06
- 91 "Analytical I-V and C-V Models for Amorphous InGaZnO TFTs and their Application to Circuit Simulations" in SID'11 Dig. Tech. Papers, 2011-05
- 90 "Density-of-States Based Analysis on the Effect of Active Thin-film Thickness on Current Stress-induced Instability in Amorphous InGaZnO AMOLED Driver TFTs" in SID'11 Dig. Tech. Papers, 2011-05
- 89 "A Study on the Hfin dependence of Intrinsic gate delay in FinFET" The 18th Korean Conference on Semiconductors, 2011-02
- 88 "Modeling and Separate Extraction of Gate Bias- and Channel Length-Dependent intrinsic and Extrinsic Resistance Elements in LDD MOSFETs" The 18th Korean Conference on Semiconductors, 2011-02
- 87 "Phisics-Based SPICE Model of a-InGaZnO Thin Film Transistor Using Verilog-A" The 18th Korean Conference on Semiconductors, 2011-02
- 86 "Physical Parameter-Based Anaytical I-V Model of Amorphous Indium-Gallium-Zinc-Oxide thin-Film Transistors" The 18th Korean Conference on Semiconductors, 2011-02
- 85 "Quantitative Analysis of Negative Bias Illumination Stress-Induced Instability Mechanisms in Amorphous InGaZnO Thin-Film Transistors" The 18th Korean Conference on Semiconductors, 2011-02
- 84 "Separate Extraction of Source and Drain Resistances in Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistor with Parallel Mode C-V Technique" The 18th Korean Conference on Semiconductors, 2011-02
- 83 "Superlattice Band-gap Engineered(SBE) Capacitorless 1T DRAM Cell with a Narrow Bandgap SiGe Channel for High Performance and Extended Retention of Holes" The 18th Korean Conference on Semiconductors, 2011-02
- 82 "The oxygen flow-rate-dependence of electrical stress-induced instability of amorphous InGaZnO thin-film transistors" The 18th Korean Conference on Semiconductors, 2011-02
S!LK / TEL : 02-910-5350 / FAX : 02-910-4449
77, JEONGNEUNG-RO, SEONGBUK-GU, SEOUL, REPUBLIC OF KOREA [02707] KOOKMIN-UNIV 7TH BUILDING 7TH FLOOR NO.704
COPYRIGHT(c) 2013 Semiconductor Devices & !ntegrated Circuits Lab.@ KMU All rights reserved.
