100J. H. Lee, J. Lee, M-C Sun, W. H. Lee, M Uhm, S. Hwang, I-Y Chung, D. M. Kim, D. H. Kim, and B-G Park"Analysis of hysteresis characteristics of fabricated SiNW biosensor in aqueous environment with reference electrode"Silicon Nanoelectronics Workshop (SNW), 2012 IEEE Digital Object Identifier, 2012-
99J.‐H. Ahn, J.‐Y. Kim, C. Jung, D.‐I. Moon, S.‐J. Choi, C.‐H. Kim, K.‐B. Lee, H. G. Park, and Y.‐K. Choi"CMOS-Based Biosensors with an Independent Double‐Gate FinFET"IEEE International Electron Device Meeting (IEDM), 2011-12
98D.‐I. Moon, J.‐S. Oh, S.‐J. Choi, S. Kim, J.‐Y. Kim, M.‐S. Kim, Y.‐S. Kim, M.‐H. Kang, J.‐W. Kim, and Y.‐K. Choi"Multi‐Functional Universal Device using a Band‐Engineered Vertical Structure"IEEE International Electron Device Meeting (IEDM), 2011-12
97M. Lim, S.‐J. Choi, K. Moon, E. Jung, M.‐L. Seol, Y. Do, Y.‐K. Choi, and H. Han"Terahertz Time Domain Spectroscopy of Vertical Silicon Nanowires"36th International Conference on Infrared, Millimeter, and Terahertz Waves, 2011-10
96D. J. Baek, S.‐J. Choi, D.‐I. Moon, and Y.‐K. Choi"Scaling of the Pull‐In Voltage in a Novel CMOS‐compatible NEMS Switch"Solid State Devices and Materials (SSDM), 2011-09
95H. Jang, J. Lee, J. H. Lee, H. Seo, M. Uhm, W. H. Lee, D. M. Kim, I.-Y. Chung and D. H. Kim"Analytical of current hysteresis of SiNW in the aqueous solution depending on measurement biases"2011 11th IEEE NANO, 2011-08
94S.‐J. Choi, D.‐I. Moon, J. P. Duarte, S. Kim, and Y.‐K. Choi"A Novel Junctionless All‐Around‐Gate SONOS Device with a Quantum Nanowire on a Bulk Substrate for 3D Stack NAND Flash Memory"Symposium on VLSI Technology Digest of Technical Papers (VLSI), pp. 74‐75, 2011-06
93S. Kim, S.‐J. Choi, D.‐I. Moon, and Y.‐K. Choi"Optical‐Charge Pumping: A Universal Trap Characterization Technique for Nanoscale Floating Body Devices"Symposium on VLSI Technology Digest of Technical Papers (VLSI), pp. 190‐191, 2011-06
92S.-M. Joe, M.-K. Jeong, M.-S. Lee, B.-S. Jo, J.-H. Bae, S.-K. Park, K.-R. Han, J.-H. Yi, G.-S. Cho, and J.-H. Lee"Extraction of 3-D trap position in NAND flash memory considering channel resistance of pass cells and bit-line interference"2011 Symposium on VLSI Technology (VLSIT), 2011-06
91M. Bae, Y. Kim, W. Kim, D. Kong, H. Jung, Y. W. Jeon, S. Kim, I. Hur, J. Kim, D. M. Kim, D. H. Kim, B. D. Ahn, S. Y. Park, J.-H. Park, J. H. Kim, J. Park, and J.-H. Lee"Analytical I-V and C-V Models for Amorphous InGaZnO TFTs and their Application to Circuit Simulations"in SID'11 Dig. Tech. Papers, 2011-05
90D. Kong, H. Jung, Y. Kim, M. Bae, Y. W. Jeon, S. Kim, J. Jang, J. Kim, W. Kim, I. Hur, D. M. Kim, D. H. Kim, B. D. Ahn, S. Y. Park, J.-H. Park, J. H. Kim, J. Park, and J.-H. Lee"Density-of-States Based Analysis on the Effect of Active Thin-film Thickness on Current Stress-induced Instability in Amorphous InGaZnO AMOLED Driver TFTs"in SID'11 Dig. Tech. Papers, 2011-05
89D. Yun, J. Jang, H. Bae, J. S. Shin, J. Lee, H. Jang, E. Hong, W. H. Lee, M. Uhm, H. Seo, D. H. Kim, and D. M. Kim"A Study on the Hfin dependence of Intrinsic gate delay in FinFET"The 18th Korean Conference on Semiconductors, 2011-02
88H. Bae, J. Jang, J. S. Shin, D. Yun, J. Lee, H. Jang, E. Hong, D. H. Kim, and D. M. Kim"Modeling and Separate Extraction of Gate Bias- and Channel Length-Dependent intrinsic and Extrinsic Resistance Elements in LDD MOSFETs"The 18th Korean Conference on Semiconductors, 2011-02
87Y. Jeon, I. Hur, S. Kim, Y. Kim, M.-K. Bae, H. K. Jung, D. S. Kong, W. Kim, J. Kim, H. Jang, J. Jang, J. Lee, D. M. Kim, and D. H. Kim"Phisics-Based SPICE Model of a-InGaZnO Thin Film Transistor Using Verilog-A"The 18th Korean Conference on Semiconductors, 2011-02
86M.-K. Bae, Y. Jeon, S. Kim, Y. Kim, D. S. Kong, H. Jung, J. Lee, J. Jang, W. Kim, I. Hur, J. Kim, D. M. Kim, and D. H. Kim"Physical Parameter-Based Anaytical I-V Model of Amorphous Indium-Gallium-Zinc-Oxide thin-Film Transistors"The 18th Korean Conference on Semiconductors, 2011-02
85Y. Kim, S. Kim, Y. Jeon, M.-K. Bae, D. S. Kong, H. K. Jung, J. Lee, J. Jang, J. Kim, W. Kim, I. Hur, D. M. Kim, and D. H. Kim"Quantitative Analysis of Negative Bias Illumination Stress-Induced Instability Mechanisms in Amorphous InGaZnO Thin-Film Transistors"The 18th Korean Conference on Semiconductors, 2011-02
84H. Bae, S. Kim, M. Bae, H. Seo, W. H. Lee, M. Uhm, D. H. Kim, and D. M. Kim"Separate Extraction of Source and Drain Resistances in Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistor with Parallel Mode C-V Technique"The 18th Korean Conference on Semiconductors, 2011-02
83J. S. Shin, H. Bae, J. Jang, J. Lee, D. Yun, H. Jang, E. Hong, M. Uhm, W. H. Lee, H. Seo, D. H. Kim, and D. M. Kim"Superlattice Band-gap Engineered(SBE) Capacitorless 1T DRAM Cell with a Narrow Bandgap SiGe Channel for High Performance and Extended Retention of Holes"The 18th Korean Conference on Semiconductors, 2011-02
82S. Kim, Y. Jeon, Y. Kim, D. S. Kong, H. K. Jung, M.-K. Bae, J. Lee, J. Jang, H. Jang, J. Kim, W. Kim, I. Hur, J.-S. Lee, D. M. Kim, and D. H. Kim"The oxygen flow-rate-dependence of electrical stress-induced instability of amorphous InGaZnO thin-film transistors"The 18th Korean Conference on Semiconductors, 2011-02
81D. S. Kong, H. K. Jung, M.-K. Bae, Y. Kim, S. Kim, Y. Jeon, J. Kim, W. Kim, I. Hur, J. Lee, J. Jang, J.-S. Lee, D. M. Kim, and D. H. Kim"The Effect of the Active Layer Thickness on the Negative Bias Illumination Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors"The 18th Korean Conference on Semiconductors, 2011-02