Prof. Kim`s R.P.

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  • 5 D. H. Kim, S.-K. Sung, J. S. Sim, K. R. Kim, J. D. Lee, B.-G. Park, B. H. Choi, S. W. Hwang, and D. Ahn "Single-electron transistor based on silicon-on-insulator quantum wire fabricated by a side-wall patterning method" Appl. Phys. Lett., vol. 79, no. 23, pp. 3812~3814, 2001-12
  • 4 D. H. Kim, J. D. Lee, and B.-G. Park "Room Temperature Coulomb Oscillation of a Single Electron Switch with an Ectrically Formed Quantum Dot and Its Modeling" Jpn. J. Appl. Phys., vol. 39, pp. 2329~2333, 2000-04
  • 3 T.-S. Yoon, J.-Y. Kwon, D.-H. Lee, K.-B. Kim, S.-H. Min, D.-H.-Chae, D. H. Kim, J. D. Lee, and B.-G. Park "High spatial density nanocrystal formation using thin layer of amorphous Si0.7Ge0.3 deposited on SiO2" J. of Applied Physics., vol. 87, no. 5, pp2449~2453, 2000-03
  • 2 D. H. Chae, D. H. Kim, Y. J. Lee, C. H. Kwak, J. D. Lee, B. G. Park, T. S. Yoon, J. Y. Kwon, K. B. Kim, K. R. Kim, N. J. Park, H. S. Yoon and S. J. Jeong "Nanocrystal Memory Cell Using High-Density Si 0.73Ge 0.27 Quantum Dot Array" J. Korean Physical Society, vol. 35, pp. S995~S998, 1999-12
  • 1 D. H. Kim, D. H. Chae, J. D. Lee, B. G. Park, and H.-G. Lee "Silicon Single Electron Transistors with a Dual Gate Structure" J. Korean Physical Society, vol. 33, pp. s278-s282, 1998-11