Journal papers

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  • 399 H. B. Yoo, H. Kim, J. H. Ryu, J. Park, J.-H. Bae, S.-J. Choi, D. H. Kim, and D. M. Kim "Modeling and Characterization of Photovoltaic and Photoconductive Effects in Insulated-Gate Field Effect Transistors under Optical Exciation" Solid-State Electronics, vol. 186, p. 108139, DOI: 10.1016/j.sse.2021.108139, 2021-06
  • 398 H. -N. Yoo, B. Choi, J. -W. Back, H. -J. Kang, E. Kwon, S. Chung, J. -H. Bae, B. -G. Park, and J. -H. Lee "Effect of Lateral Charge Diffusion on Retention Characteristics of 3D NAND Flash Cells" IEEE Electron Device Letters, doi: 10.1109/LED.2021.3088851., 2021-06
  • 397 S. Kim†, M.-S. Kim†, Y. Lee, H.-D. Kim, Y.-K. Choi, and S.-J. Choi* "Low-power true random number generator based on randomly distributed carbon nanotube networks" IEEE Access, vol. 9, pp. 91341-91346, doi:10.1109/ACCESS.2021.3091491, 2021-06
  • 396 H. Kim, H. B. Yoo, J. H. Ryu, J.-H. Bae, S.-J. Choi, D. H. Kim and D. M. Kim "Current-to-Transconductance Ratio Technique for Simultaneous Extraction of Threshold Voltage and Parasitic Resistances in MOSFETs" Solid-State Electronics, Vol. 183, p.108133, DOI: 10.1016/j.sse.2021.108133, 2021-06
  • 395 D. Kim, J. T. Jang, D. M. Kim, S.-J. Choi, S. Ban, M. Shin, H. Lee, H. D. Lee, H.-S. Mo, D. H. Kim*(*Corresponding author) "A physics-based compact model for phase-change memory considering the ratio of vertical-to-lateral crystal growth rate for the design of cross-point storage-class memory" Solid-State Electronics, Vol. 186, p. 107955, DOI: 10.1016/j.sse.2020.107955, 2021-01
  • 394 J. -H. Kim†, Y. Seo†, J. T. Jang, S. Park, D. Kang, J. Park, M. Han, C. Kim, D. -W. Park*, and D. H. Kim*(†These authors are co-first authors.)(*Corresponding author) "Reliability-Aware SPICE Compatible Compact Modeling of IGZO Inverters on a Flexible Substrate." Appl. Sci., no.11, p. 4838. doi:10.3390/app11114838, 2021-05
  • 393 G. W. Yang, S. G. Seo, S. Choi, D. H. Kim* and S. H. Jin* (*Corresponding author) "Unscrambling for Subgap Density-of-States in Multilayered MoS2 Field Effect Transistors under DC Bias Stress via Optical Charge-Pumping Capacitance-Voltage Spectroscopy" IEEE Access, vol. 9, pp. 73090-73102, doi: 10.1109/ACCESS.2021.3081095., 2021-05
  • 392 J. Park, N. Lee, G. -J. Kim, H. -S. Choi, D. H. Kim, C. Kim, M. Kang, and Y. Kim "Impact Ionization and Hot-Carrier Degradation in Saddle-Fin and Buried-Gate Transistor of Dynamic Random Access Memory at Cryogenic Temperature" IEEE Electron Device Letters, vol. 42, no. 5, pp. 653-656, doi: 10.1109/LED.2021.3067109., 2021-05
  • 391 D. Kang, J. T. Jang, S. Park, M. H. R. A, J. -H. Bae, S. -J. Choi, D. M. Kim, C. Kim, S. Cho*, and D. H. Kim*(*Corresponding author) "Threshold-Variation-Tolerant Coupling-Gate α-IGZO Synaptic Transistor for More Reliably Controllable Hardware Neuromorphic System" IEEE Access, vol. 9, pp. 59345-59352, doi: 10.1109/ACCESS.2021.3072688, 2021-04, 2021-04
  • 390 J. T. Jang†, H. -D. Kim†, C. Kim, S. -J. Choi, J. -H. Bae, D. M. Kim, H. -S. Kim*, and D. H. Kim*(†These authors equally contributed to this work)(*Corresponding author) "Observation of Divacancy Formation for ZnON Thin-Film Transistors with Excessive N content" IEEE Electron Device Letters, doi: 10.1109/LED.2021.3077908., 2021-05
  • 389 W. Shin, D. Kwon, J. -H. Bae, S. Lim, B. -G. Park and J. -H. Lee "Impacts of Program/Erase Cycling on the Low-Frequency Noise Characteristics of Reconfigurable Gated Schottky Diodes" IEEE Electron Device Letters, doi: 10.1109/LED.2021.3072915., 2021-04
  • 388 J. T. Jang, D. Ko, S. -J. Choi, D. M. Kim, and *D. H. Kim(* Corresponding author) "Observation of Hydrogen-related Defect in Subgap Density of States and Its Effects under Positive Bias Stress in amorphous InGaZnO TFT" IEEE Electron Device Letters, doi: 10.1109/LED.2021.3066624., 2021-03
  • 387 J. -H. Kim, J. T. Jang, J. -H. Bae, S. -J. Choi, D. M. Kim, C. Kim, Y. Kim 3,* and D. H. Kim*(* Corresponding author) "Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors" Micromachines, vol. 12, no. 3, p. 327, 2021-03
  • 386 S. Kim, D. Kwon, T. -H. Kim, T. J. Park, S. -J. Cho, H. -S. Mo, D. H. Kim, and B. -G. Park "Multiplexed Silicon Nanowire Tunnel FET-Based Biosensors With Optimized Multi-Sensing Currents" IEEE Sensors Journal, vol. 21, no. 7, pp. 8839-8846, doi: 10.1109/JSEN.2021.3054052., 2021-03
  • 385 S. Choi†, I. Chae†, J. Park, Y. Seo, C. I. Ryoo, D. M. Kim, S.-J. Choi, D.-W. Park*, and D. H. Kim*(†These authors equally contributed to this work & *co-corresponding authors) "Extraction Technique for Flat Band Voltage Using Multi-Frequency C – V Characteristics in Amorphous InGaZnO Thin-Film-Transistors" IEEE Electron Device Letters, vol. 41, no. 12, pp. 1778-1781, doi: 10.1109/LED.2020.3032442., 2020-12
  • 384 J.-T. Yu†, H. B. Yoo†, H. Kim, J. H. Ryu, S.-J. Choi, D. H. Kim, and D. M. Kim*(†These two authors contributed equally to this work) "Characterization of Spatial Distribution of Trap Across the Substrate in Metal-Insulator-Semiconductor Structure with Band Bending Effect" Journal of Nanoscience and Nanotechnology, Vol. 21, No. 8, pp. 4315-4319, DOI: 10.1166/jnn.2021.19391, 2021-08
  • 383 K. Lee, Y. Kim, H. Lee, S. Park, Y. Lee, M.-K. Joo, H. Ji, J. Lee, J. Chun, M. Sung, Y.-H. Cho, D. Kim, J. Choi, J. W. Lee, D.-Y. Jeon*, S.-J. Choi*, and G.-T. Kim* (*co-corresponding authors) "Defect spectroscopy of sidewall interfaces in gate-all-around silicon nanosheet FET" Nanotechnology, vol. 32, p. 165202, DOI: 10.1088/1361-6528/abd278, 2021-01
  • 382 Y. Lee†, J. Yoon†, Y. Kim†, D. M. Kim, D. H. Kim, and S.-J. Choi* (†These authors equally contributed to this work) "Humidity effects according to the type of carbon nanotubes" IEEE Access, vol. 9, pp. 6810-6816, DOI:10.1109/ACCESS.2020.3048173 , 2020-12
  • 381 S. Kim, Y. Lee, H.-D. Kim, and S.-J. Choi* "A tactile sensor system with sensory neurons and a perceptual synaptic network based on semivolatile carbon nanotube transistors" NPG Asia Materials, vol. 12, no. 76, pp. 1-8, DOI: 10.1038/s41427-020-00258-9, 2020-12
  • 380 J.-H. Bae, D. Kwon*, S. Cheema, A. J. Tan, C. Hu, and S. Salahuddin*, (*co-corresponding authors) "Highly Scaled, High Endurance, Ω-Gate, Nanowire Ferroelectric FET Memory Transistors" IEEE Electron Device Letters, vol. 41, no. 11, pp. 1637-1640, doi: 10.1109/LED.2020.3028339, 2020-11