Journal papers

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  • 389 W. Shin, D. Kwon, J. -H. Bae, S. Lim, B. -G. Park and J. -H. Lee "Impacts of Program/Erase Cycling on the Low-Frequency Noise Characteristics of Reconfigurable Gated Schottky Diodes" IEEE Electron Device Letters, doi: 10.1109/LED.2021.3072915., 2021-04
  • 388 J. T. Jang, D. Ko, S. -J. Choi, D. M. Kim, and *D. H. Kim(* Corresponding author) "Observation of Hydrogen-related Defect in Subgap Density of States and Its Effects under Positive Bias Stress in amorphous InGaZnO TFT" IEEE Electron Device Letters, doi: 10.1109/LED.2021.3066624., 2021-03
  • 387 J. -H. Kim, J. T. Jang, J. -H. Bae, S. -J. Choi, D. M. Kim, C. Kim, Y. Kim 3,* and D. H. Kim*(* Corresponding author) "Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors" Micromachines, vol. 12, no. 3, p. 327, 2021-03
  • 386 S. Kim, D. Kwon, T. -H. Kim, T. J. Park, S. -J. Cho, H. -S. Mo, D. H. Kim, and B. -G. Park "Multiplexed Silicon Nanowire Tunnel FET-Based Biosensors With Optimized Multi-Sensing Currents" IEEE Sensors Journal, vol. 21, no. 7, pp. 8839-8846, doi: 10.1109/JSEN.2021.3054052., 2021-03
  • 385 S. Choi†, I. Chae†, J. Park, Y. Seo, C. I. Ryoo, D. M. Kim, S.-J. Choi, D.-W. Park*, and D. H. Kim*(†These authors equally contributed to this work & *co-corresponding authors) "Extraction Technique for Flat Band Voltage Using Multi-Frequency C – V Characteristics in Amorphous InGaZnO Thin-Film-Transistors" IEEE Electron Device Letters, vol. 41, no. 12, pp. 1778-1781, doi: 10.1109/LED.2020.3032442., 2020-12
  • 384 J.-T. Yu†, H. B. Yoo†, H. Kim, J. H. Ryu, S.-J. Choi, D. H. Kim, and D. M. Kim*(†These two authors contributed equally to this work) "Characterization of Spatial Distribution of Trap Across the Substrate in Metal-Insulator-Semiconductor Structure with Band Bending Effect" Journal of Nanoscience and Nanotechnology, Vol. 21, No. 8, pp. 4315-4319, DOI: 10.1166/jnn.2021.19391, 2021-08
  • 383 K. Lee, Y. Kim, H. Lee, S. Park, Y. Lee, M.-K. Joo, H. Ji, J. Lee, J. Chun, M. Sung, Y.-H. Cho, D. Kim, J. Choi, J. W. Lee, D.-Y. Jeon*, S.-J. Choi*, and G.-T. Kim* (*co-corresponding authors) "Defect spectroscopy of sidewall interfaces in gate-all-around silicon nanosheet FET" Nanotechnology, vol. 32, p. 165202, DOI: 10.1088/1361-6528/abd278, 2021-01
  • 382 Y. Lee†, J. Yoon†, Y. Kim†, D. M. Kim, D. H. Kim, and S.-J. Choi* (†These authors equally contributed to this work) "Humidity effects according to the type of carbon nanotubes" IEEE Access, vol. 9, pp. 6810-6816, DOI:10.1109/ACCESS.2020.3048173 , 2020-12
  • 381 S. Kim, Y. Lee, H.-D. Kim, and S.-J. Choi* "A tactile sensor system with sensory neurons and a perceptual synaptic network based on semivolatile carbon nanotube transistors" NPG Asia Materials, vol. 12, no. 76, pp. 1-8, DOI: 10.1038/s41427-020-00258-9, 2020-12
  • 380 J.-H. Bae, D. Kwon*, S. Cheema, A. J. Tan, C. Hu, and S. Salahuddin*, (*co-corresponding authors) "Highly Scaled, High Endurance, Ω-Gate, Nanowire Ferroelectric FET Memory Transistors" IEEE Electron Device Letters, vol. 41, no. 11, pp. 1637-1640, doi: 10.1109/LED.2020.3028339, 2020-11
  • 379 J.-H. Ahn†, B. Choi†, and S.-J. Choi* (†These authors equally contributed to this work) "Understanding the signal amplification in dual-gate FET-based biosensors" J. Appl. Phys., vol. 128, p. 184502, DOI: 10.1063/5.0010136, 2020-11
  • 378 J. T. Jang†, J. Min†, Y. Hwang, S.-J. Choi, D. M. Kim, H. Kim*, and D. H. Kim* (†These authors equally contributed to this work & *co-corresponding authors) "Digital and Analog Switching Characteristics of InGaZnO Memristor Depending on Top Electrode Material for Neuromorphic System" IEEE Access, vol. 8, pp. 192304-192311, doi: 10.1109/ACCESS.2020.3032188, 2020-10
  • 377 H. B. Yoo1, J. Yu1, H. Kim, J. H. Ryu, S.-J. Choi, D. H. Kim, and D. M. Kim* (1 Contributed equally to this work.)(*Corresponding author.) "Deep Depletion Capacitance-Voltage Technique For Spatial Distribution of Traps Across the Substrate in MOS Structures" Solid-State Electronics, 107905, 2020-10
  • 376 H. Kim, H. B. Yoo, J.-T. Yu, J. H. Ryu, S.-J. Choi , D. H. Kim, and D. M. Kim "Alternating Current-Based Technique for Separate Extraction of Parasitic Resistances in MISFETs With or Without the Body Contact" IEEE Electron Device Lett., vol. 41, no. 10, pp. 1528-1531, 2020-10
  • 375 J. T. Jang, D. Kim, W. S. Choi, S.-J. Choi, D. M. Kim, Y. Kim*, and D. H. Kim* (*co-corresponding authors) "One Transistor-Two Memristor Based on Amorphous Indium-Gallium-Zinc-Oxide for Neuromorphic Synaptic Devices" ACS Appl. Electron. Mater., vol. 2, no. 9, pp. 2837-2844, 2020-09
  • 374 J. T. Jang, H.-D. Kim, D. M. Kim, S.-J. Choi, H.-S. Kim*, and D. H. Kim* (*co-corresponding authors) "Effect of Anion Composition on the Bias Stress Stability in Zn–O–N Thin-Film Transistors" IEEE Electron Device Lett., vol. 41, no. 9, pp. 1376-1379, 2020-08
  • 373 Y. Lee, J. Yoon, H.-J. Kim, G.-H. Park, J. W. Jeon, D. H. Kim, D. M. Kim, M.-H. Kang*, and S.-J. Choi* (*co-corresponding authors) "Wafer-Scale Carbon Nanotube Network Transistors" Nanotechnology, vol. 31, no. 46, p. 465303, DOI: 10.1088/1361-6528/abac31, 2020-08
  • 372 D. Kim†, J. T. Jang†, E. Yu, J. Park, J. Min, D. M. Kim, S.-J. Choi, H.-S. Mo, S. Cho*, K. Roy, D. H. Kim* (†These authors equally contributed to this work & *co-corresponding authors) "Pd/IGZO/p+-Si Synaptic Device with Self-Graded Oxygen Concentrations for Highly Linear Weight Adjustability and Improved Energy Efficiency" ACS Appl. Electron. Mater., vol. 2, no. 8, pp. 2390-2397, 2020-07
  • 371 S. Kim, Y. Lee, H.-D. Kim, and S.-J. Choi* "16-bit Fixed-Point Number Multiplication with CNT Transistor Dot-Product Engine" IEEE Access, vol. 8, pp. 133597 - 133604, DOI: 10.1109/ACCESS.2020.3009637, 2020-07
  • 370 H. B. Yoo, S. K. Kim, J. Kim, J. Yu, S.-J. Choi, D. H. Kim, D. M. Kim "Characterization of Subgap Density-of-States by Sub-Bandgap Optical Charge Pumping in In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors" Journal of Nanoscience and Nanotechnology, vol. 20, no. 7, pp. 4287-4291(5), 2020-07