Journal papers

Home > Publications > Journal papers

  • 339 S.-T. Lee, S. Lim, N. Choi, J.-H. Bae, D. Kwon, H.-S. Kim, B.-G. Park, and J.-H. Lee "Effect of Word-Line Bias on Linearity of Multi-Level Conductance Steps for Multi-Layer Neural Networks Based on NAND Flash Cells" Journal of Nanoscience and Nanotechnology, vol. 20, no. 7, pp. 4138-4142, doi: 10.1166/jnn.2020.17791, 2020-07
  • 338 D. Kwon, S. Lim, J.-H. Bae, S.-T. Lee, H. Kim, C.-H. Kim, B.-G. Park, and J.-H. Lee "Adaptive Weight Quantization Method for Nonlinear Synaptic Devices" IEEE Transactions on Electron Devices, vol. 66, no. 1, pp.395-401, doi: 10.1109/TED.2018.2879821, 2019-01
  • 337 Y.-T. Seo, M.-K. Park, J.-H. Bae, B.-G. Park, and J.-H. Lee "Implementation of Synaptic Device Using Various High-k Gate Dielectric Stacks" Journal of Naniscience and Nanotechnology, vol. 20, no. 7, pp. 4292-4297, doi: 10.1166/jnn.2020.17788, 2020-07
  • 336 S. Hong, Y. Hong, Y. Jeong, G. Jung, W. Shin, J. Park, J.-K. Lee, D. Jang, J.-H. Bae, and J.-H. Lee "Improved CO gas detection of Si MOSFET gas sensor with catalytic Pt decoration and pre-bias effect" Sensors and Actuators B: Chemical, vol. 300, p. 127040, doi: 10.1016/j.snb.2019.127040, 2019-12
  • 335 S. Y. Woo, K.-B. Choi, J. Kim, W.-M. Kang, C.-H. Kim, Y.-T. Seo, J.-H. Bae, B.-G. Park, and J.-H. Lee "Implementation of homeostasis functionality in neuron circuit using double-gate device for spiking neural network" Solid-State Electronics, vol. 165, p. 107741, doi: 10.1016/j.sse.2019.107741, 2020-03
  • 334 J. T. Jang§, H. Kang§, H. R. Yu, E. S. Kim, K. S. Son, S.-H. Cho, D. M. Kim, S.-J. Choi, D. H. Kim* "The Influence of Anion Composition on Subgap Density of States and Electrical Characteristics in ZnON Thin-Film Transistors" IEEE Electron Device Letters, vol. 40, no. 1, pp. 40-43, DOI: 10.1109/LED.2018.2883732, 2019-01
  • 333 J. Kim, C.-H. Kim, S. Y. Woo, W.-M. Kang, Y.-T. Seo, S. Lee, S. Oh, J.-H. Bae, B.-G. Park, and J.-H. Lee "Initial synaptic weight distribution for fast learning speed and high recognition rate in STDP-based spiking neural network" Solid-State Electronics, vol. 165, p. 107742, doi: 10.1016/j.sse.2019.107742, 2020-03
  • 332 S. Lim, J.-H. Bae, J.-H. Eum, S. Lee, C.-H. Kim, D. Kwon, B.-G. Park, and J.-H. Lee "Adaptive learning rule for hardware-based deep neural networks using electronic synapse devices" Neural Computing & Applications, vol. 31, no. 11, pp. 8101-8116, doi: 10.1007/s00521-018-3659-y, 2019-11
  • 331 H. Kim, J.-H. Bae, S. Lim, S.-T. Lee, Y.-T. Seo, D. Kwon, B.-G. Park, and J.-H. Lee "Efficient precise weight tuning protocol considering variation of the synaptic devices and target accuracy" Neurocomputing, vol. 378, pp. 189-196, doi: 10.1016/j.neucom.2019.09.099, 2020-02
  • 330 B. Choi, J. Lee, J. Yoon, M. Jeon, Y. Lee, J. Han, J. Lee, J. Park, Y. Kim, D. M. Kim, D. H. Kim, S. Chung, C. Lim, S.-J. Choi* "Effect of charge trap layer thickness on the charge spreading behavior within a few seconds in 3-D charge trap flash memory" Semiconductor Science and Technology, vol. 33, no. 10, doi:10.1088/1361-6641/aade29, 2018-09
  • 329 Y. Hong, M. Wu, J.-H. Bae, S. Hong, Y. Jeong, D. Jang, J. S. Kim, C. S. Hwang, B.-G. Park, and J.-H. Lee "A new sensing mechanism of Si FET-based gas sensor using pre-bias" Sensors and Actuators B: Chemical, vol. 302, p. 127147, doi: 10.1016/j.snb.2019.127147, 2020-01
  • 328 S.-T. Lee, S. Lim, N. Choi, J.-H. Bae, D. Kwon, B.-G. Park, and J.-H. Lee "Operation Scheme of Multi-Layer Neural Networks Using NAND Flash Memory as High-Density Synaptic Devices" IEEE Journal of the Electron Device Society, vol. 7, pp. 1085-1093, doi: 10.1109/JEDS.2019.2947316, 2019-10
  • 327 H. R. Yu, J. T. Jang, D. Ko, S. Choi, G. Ahn, S.-J. Choi, D. M. Kim, and D. H. Kim* "Degradation on the Current Saturation of Output Characteristics in Amorphous InGaZnO Thin-Film Transistors" IEEE Transactions on Electron Devices, vol. 65, no. 8, DOI: 1109/TED.2018.2844862, 2018-08
  • 326 J.-H. Bae, S. Lim, D. Kwon, S.-T. Lee, H. Kim, and J.-H. Lee "Gated Schottky Diode-Type Synaptic Device with a Field-Plate Structure to Reduce the Forward Current" Journal of Nanoscience and Nanotechnology, vol.19, no. 10, pp. 6135-6138, doi: 10.1166/jnn.2019.17003, 2019-10
  • 325 S. Kim†, B. Choi†, M. Lim, Y. Kim, H.-D. Kim, S.-J. Choi* (†These authors equally contributed to this work) "Synaptic Device Network Architecture with Feature Extraction for Unsupervised Image Classification" Small, vol. 14, no. 32, p.1800521, DOI: 10.1002/small. 201800521, 2018-07
  • 324 S. Hong, J. Shin, Y. Hong, M. Wu, Y. Jeong, D. Jang, G. Jung, J.-H. Bae, and J.-H. Lee "Humidity-Sensitive Field Effect Transistor with In2O3 Nanoparticles as a Sensing Layer" Journal of nanoscience and nanotechnology, vol. 19, no. 10, pp. 6656-6662, doi: 10.1166/jnn.2019.17092, 2019-10
  • 323 Y. Lee, B. Choi, J. Yoon, Y. Kim, J. Park, H-.J. Kim, D. H. Kim, D. M. Kim, S. Kim*, and S.-J. Choi*(*co-corresponding authors) "Highly transparent tactile sensor based on a percolated carbon nanotube network" AIP Advances, vol. 8, p. 065109, DOI:10.1063/1.5036530, 2018-06
  • 322 J.-H. Bae, J.-W. Back, M.-W. Kwon, J. H. Seo, K. Yoo, S. Y. Woo, K. Park, B.-G. Park, and J.-H. Lee "Characterization of a Capacitorless DRAM Cell for Cryogenic Memory Applications" IEEE Electron Device Letters, vol. 40, no. 10, pp. 1614-1617, doi: 10.1109/LED.2019.2933504, 2019-08
  • 321 J. Yoon†, J. Han†, B. Choi, Y. Lee, Y. Kim, J. Park, M. Lim, M.-H. Kang, D. H. Kim, D. M. Kim, S. Kim*, S.-J. Choi* "A Three-Dimensional Printed Poly(vinyl alcohol) Substrate with Controlled On-Demand Degradation for Transient Electronics" ACS Nano, vol.12, no.6, pp6006-6012, DOI: 10.1021/acsnano.8b02244, 2018-05
  • 320 S. Y. Woo, K.-B. Choi, S. Lim, S.-T. Lee, C.-H. Kim, W.-M. Kang, D. Kwon, J.-H. Bae, B.-G. Park, and J.-H. Lee "Synaptic device using a floating fin-body MOSFET with memory functionality for neural network" Solid-State Electronics, vol. 156, pp. 23-27, doi: 10.1016/j.sse.2019.02.011, 2019-06